Skip to main content Accessibility help

X-Ray Double-Crystal Diffraction Studies of Si+ Implantation in Si GaAs

  • Guanqun Xia (a1), Jingyi Chen (a1), Nanchang Zhu (a1) and Suying Hu (a1)


The characteristics of Si+ implanted into SI GaAs and its annealing behavior have been studied by x-ray double-crystal diffraction method. Results show that there is much information on strain contained in the rocking curves. When implanting at low doses, most of the implanted Si+ is in interstitial positions in the GaAs, and this produces tensile strain. After annealing, most of the implanted Si+ can be activated and the strain can be relieved. But when implanting at large doses, the strain can not be completely relieved even after annealing at high temperature



Hide All
[1] Anderson, C.J., et al., GaAs IC Symposium ‘ 88, (1988), 91.
[2] Takagi, S., Acta Cryst., 15 (1962), 1311.
[3] Burgeat, J. et al., J. Appl. Phys., 40 (1969), 3505.
[4] Speriosu, V.S. et al., Appl. Phys. Lett., 34 (1979), 539.
[5] Speriosu, V.S., J. Appl. Phys., 52 (1981), 6094.
[6] Wie, C.R. et al., J. Appl. Phys., 59 (1986), 3743.


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed