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X-Ray Diffraction Study of Rare Earth Epitaxial Structures Grown by MBE onto (111) GaAs

Published online by Cambridge University Press:  03 September 2012

W. R. Bennett ,
R. F. C. Farrow ,
S. S. P. Parkin  and
E. E. Marinero
W. R. Bennett
Affiliation:
IBM Almaden Research Center, San Jose CA. A.P. Segmüller, IBM Thomas J. Watson Research Center, Yorktown Heights, NY.
R. F. C. Farrow
Affiliation:
IBM Almaden Research Center, San Jose CA. A.P. Segmüller, IBM Thomas J. Watson Research Center, Yorktown Heights, NY.
S. S. P. Parkin
Affiliation:
IBM Almaden Research Center, San Jose CA. A.P. Segmüller, IBM Thomas J. Watson Research Center, Yorktown Heights, NY.
E. E. Marinero
Affiliation:
IBM Almaden Research Center, San Jose CA. A.P. Segmüller, IBM Thomas J. Watson Research Center, Yorktown Heights, NY.
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Abstract

We report on the new epitaxial system LaF3/Er/Dy/Er/LaF3/GaAs (111) grown by molecular beam epitaxy. X-ray diffraction studies have been used to determine the epitaxial relationships between the rare earths, the LaF3 and the substrate. Further studies of symmetric and asymmetric reflections yielded the in-plane and perpendicular strain components of the rare earth layers. Such systems may be used to probe the effects of magnetoelastic interactions and dimensionality on magnetic ordering in rare earth metal films and multilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 151: Symposium G – Growth, Characterization and Properties of Ultrathin Magnetic Films and Multilayers , 1989 , 277
Copyright
Copyright © Materials Research Society 1989

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References

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