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X-Ray Diffraction Study of Cubic Boron Nitride Grown Epitaxially on Silicon

  • G. L. Doll (a1), J. A. Sell (a1), A. Wims (a1), C. A. Taylor (a2) and R. Clarke (a2)...

Abstract

We report the growth of boron nitride films on (001), (110), and (111) faces of silicon using the method of pulsed excimer laser ablation. The structure of the Alms grown on the (001) and (110) orientations of Si is cubic zincblende with a lattice constant of 3.619 Å. The films were found to be heteroepitaxial on silicon (001) with the cubic BN (100) axes parallel to Si (100), as characterized by x-ray diffraction and high-resolution transmission electron microscopy. In that system, we find evidence for an unusual 3:2 commensurate lattice matching. The films appear to cubic but randomly oriented on the Si (110), and no evidence for crystallinity is found for films grown on Si (111).

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[1] Doll, G. L., Sell, J. A., Salamanca-Riba, L., and Ballal, A. K., in Laser Ablation for Materials Synthesis, edited by Paine, D. C. and Bravman, J. C. (Mater. Res. Soc. Proc. 191, Pittsburgh, PA 1990) pp. 5560.
[2] Bauer, E. G., Dodson, B. W., Ehrlich, D. J., Feldman, L. C., Flynn, C. P., Geis, M. W., Harbison, J. P., Matyi, R. J., Peercy, P. S., Petroff, P. M., Phillips, J. M., Stringfellow, G. B., and Zangwill, A., J. Mat. Res. 5, 852 (1990).
[3] Koizumi, S., Murakami, T., Inuzuka, T., and Suzuki, K., Appl. Phys. Lett. 57, 563 (1990).
[4] Arya, S. P. S. and D’Amico, A., Thin Solid Films 157, 267 (1988).
[5] Kessler, G., Bauer, H.-D., Pompe, W., and Scheibe, H.-J., Thin Solid Films 147, L45 (1987).
[6] Murray, P.T, Donley, M.S, and McDevitt, N.T, in Processing and Characterization of Materials Using Jon Beams, edited by Rehn, L.E, Greene, J.E, and Smidt, F.A (Materials Res. Soc. Proc. 128, Pittsburgh, PA 1989) p. 469.
[7] Sankur, H. and Cheung, J. T., Appl. Phys. A 47, 271 (1988).
[8] Pyrolytic boron nitride targets were obtained from Union Carbide Coatings Service Corporation, 11907 Madison Avenue, Cleveland, OH 44107.
[9] Higashi, G. S., Chabal, Y. J., Trucks, G. W., and Raghavachari, K., Appl. Phys. Lett. 56, 656 (1990).
[10] The ablation threshold for hBN was determined in a separate experiment to be between 0.31 and 0.34 J/cm2; Sell, J.A, Doll, G.L, and Heffelfinger, D.M (unpublished).
[11] JCPDS Powder Diffraction File 25–1033.
[12] Cullity, B. D., Elements of X-ray Diffraction 2nd Edition, (Addison-Wesley, Reading, Massachusetts, 1978), p. 142.
[13] Sheftal, R. N. and Cherbakov, I. V., Crys. Res. Techn. 16, 887 (1981).

X-Ray Diffraction Study of Cubic Boron Nitride Grown Epitaxially on Silicon

  • G. L. Doll (a1), J. A. Sell (a1), A. Wims (a1), C. A. Taylor (a2) and R. Clarke (a2)...

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