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X-Ray Diffraction Study of a Thin GaAs Film on Si(100)

  • Arun S. Bommannavar (a1), C. J. Sparks (a1), A. Habenschuss (a1), G. E. Ice (a1), A. Dhere (a1), H. Morkoc (a1) and H. Zabel (a2)...

Abstract

A 900A single crystalline GaAs film deposited by molecular beam epitaxy (MBE) on a silicon crystal cut 4.1° from (001) surface was characterized with X-ray diffraction measurements of the mosaic spread, particle size and strain distribution, and lattice parameter. The GaAs film had a larger mosaic spread in the direction of the steps of the silicon surface and coherent particle sizes of about 900 Å compared to the estimated film thickness of approximately 1000 Å. Superlattice reflections gave an ordered domain size of about 330 Å. There is a residual strain gradient in the film which is nearly linear with the lattice constant differing by about 0.044 Å between the surface of the film and its interface with the silicon substrate. Lattice parameter measurements indicate a small expansion of 0.13% perpendicular to the plane of the film.

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1. Neumann, D.A., Zabel, Z., Fischer, R., and Morkoc, H., J. Appl. Phys. 61 (3), 1023 (1987).
2. Neumann, D.A., Ziaomei, Z., Zabel, H., Henderson, T., Fischer, R., Masselink, W., Klem, J., Peng, C., and Morkoc, H., J. Vac. Sci. Technol. B (USA) 4 (2), 642 (1986).
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X-Ray Diffraction Study of a Thin GaAs Film on Si(100)

  • Arun S. Bommannavar (a1), C. J. Sparks (a1), A. Habenschuss (a1), G. E. Ice (a1), A. Dhere (a1), H. Morkoc (a1) and H. Zabel (a2)...

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