In spite of its low absorption coefficient for X-rays, amorphous Silicon can be an interesting alternative approach for X-ray detection because of its low cost, its potential for large-area deposition and the possibility to deposit on a curved surface. For this application, basically two approaches have been proposed up to now: either a thick solar cell type n-i-p structure (the i-layer as to be sufficiently thick i.e typically 50 μm or more), or a normal solar cell type n-i-p structure (with a relatively thin i-layer, i.e (typically 1 to 2 μm) together with a fluorescent layer emitting visible light composed e.g. of CsJ. In this paper, we present first results of a X-ray detectors with thick i-layers (15 to 100 μm) prepared by the high deposition rate VHF-GD technique introduced at our laboratory. Detectors with low leakage currents (<4nA/cm2) under high reverse bias voltages (about 100 V) could be fabricated at rates as high as 22 Å/s. As substrates, aluminium as well as TCO-coated glass substrates were used. The detectors have a n-i-p structure, where highly conductive (100 S/cm) n-doped μc-Si:H was first deposited. For the substrate preparation, a high energy Ar plasma was applied before the first deposition step; in this way excellent sticking conditions could be achieved, although in the thicker detectors considerable curvature due to the internal mechanical stress could be observed. A medical X-ray radiation source was used, where the detector was exposed to a continuous X-ray spectrum at acceleration voltages between 80 kV and 240 kV. The paper presents measurements on the linearity of the detector, as well as on the value of the reverse current in the dark, which must be as small as possible to have the best signal to noise ratio.