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X-Ray Analysis of Multilayer Structures

Published online by Cambridge University Press:  15 February 2011

V. I. Kushnir  and
P. Georgopoulos
V. I. Kushnir
Affiliation:
Advanced Photon Source - XFD/362, Argonne National Laboratory, Argonne IL 60439-4815
P. Georgopoulos
Affiliation:
DUNU Synchrotron Research Center, Robert R. McCormick School of Engineering and Applied Science, Northwestern University, 1033 University Place, Evanston, IL 60201
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Abstract

A new technique of obtaining layer thickness and internal strains in multilayer structures and quantum wells from the rocking curve data is described and analytically proved. This method consists of Fourier transform of the experimental intensity profile multiplied by the wave vector deviation squared. It is shown that peaks of the Fourier transform correspond to distances between boundaries in the specimen. The (400) reflection curves of a quantum well in InP/InAs and a superlattice structure made up of latticematched GaAs/Ga0.49 In0.51P layers were measured with 8 KeV radiation at beamnline X-18A, National Synchrotron Light Source (NSLS) at Brookhaven National Laboratory. The results of above procedure were used to reduce a number of degrees of freedom in a computer simulation of reflecting curves. It is shown that it is possible to extract layer thicknesses with the accuracy of about 15 Å for thick layers to as low as 1 Å for superlattices. Interplanar distances can be obtained with an accuracy of 0.0001 Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 307: Symposium L – Applications of Synchrotron Radiation Techniques to Materials Science , 1993 , 143
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Razeghi, M., LP-MOCVD Growth, Characterization, and Application of InP Material. Chap. 6 of: Semiconductors amd Semimetals, Vol.31, (1990) Academic Press, Inc.Google Scholar
2. Razeghi, M., Maurel, Ph., Omnes, F., Defour, M., Boothroyd, C., Stobbs, W.M., Kelly, M., J. of Appl. Phys., 63 (9), 4511 (1979).Google Scholar
3. Hilsum, C., Proceedings of the International Conference on Semiconductors (Moscow, 1986), p. 1214.Google Scholar
4. Stringfellow, G.B., J. Appl. Phys., 43, 3455 (1972).Google Scholar
5. Scott, G.B. and Roberts, J.S., Inst. Phys. Conf. Ser. 45, 181 (1979).Google Scholar
6. Yoshino, J., Iwamoto, T., Kukimoto, H., J. Appl. Phys., 20, L290 (1980).Google Scholar
7. Razeghi, M., Maurel, Ph., Omnes, F., Armor, S. Ben, Dmowski, L., and Potral, J.C., Appl. Phys. Lett., 48, 19 (1986).Google Scholar
8. Razeghi, M., in Technology of Chemicals and Materials for Electronics, (1984) Chap. 12.Google Scholar
9. Goorsky, M.S., Kuech, T.F., Tischler, M.A., and Potemski, R.M. AppL Phys. Lett., 59(18), 2269 (1991)Google Scholar
10. Tanner, B.K., Turnbull, A.G., Stanley, C.R., Kean, K-H., and McElhinney, M. Appl. Phys. Lett., 59(18), 2272(1991)Google Scholar
11. Omnes, F. and Razeghi, M., Appl. Phys. Lett. 59(9), 1034 (1991)Google Scholar
12. Spiller, E. and Rosenbluth, A-E., Optical Engineering 25(8), 954 (1986)CrossRefGoogle Scholar
13. Spiller, E., Rev. Phys. Appl. 23, 1687 (1988)Google Scholar
14. Press, W.H., Flannery, B.P., Teukolski, S.A., W.T. Vetterling Numerical Recipies: The Art of Scientific Computing. Cambridge University Press, Cambridge, New York, New Rochelle, Melbourne, Sydney; p. 430.Google Scholar
15. Weast, R.C. et all, Handbook of Chemistry and Physics, 53-rd edition, 1972–1973, CRC Press, The Chemical Rubber Co, Ohio, pp. E–88 Google Scholar
16. Warren, B.E., X-Ray Diffraction, Addison-Wesley Publishing Co., Reading, Massachusetts * Menlo Park, California * London * Don Mills, Ontario, 1969, pp. 369–371.Google Scholar