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X-ray Amorphous P-type Conductive Oxide; ZnRh2O4

  • Satoru Narushima (a1), Hiroshi Mizoguchi (a2), Hiromichi Ohta (a2), Masahiro Hirano (a2), Ken-ichi Shimizu (a3), Kazushige Ueda (a1), Toshio Kamiya (a1) and Hideo Hosono (a1) (a2)...

Abstract

An amorphous p-type conductive oxide semiconductor was created based on a mother crystalline material, a p-type conductive ZnRh2O4 spinel. The amorphous film of ZnRh2O4 was deposited by an rf sputtering method. Seebeck coefficient was positive, +78 μVK-1, indicating that major carrier is a positive hole. A moderate electrical conductivity (2 S cm-1 at room temperature) for a p-type semiconductor was observed. Optical band gap was estimated to be 2.1 eV. P-n junction diodes with a structure of Au / a-ZnRh2O4 / a-InGaZnO4 / ITO fabricated on glass substrates, operated with a good rectifying characteristics, a rectification current ratio at ± 5V of ∼103. The threshold voltage was 2.1 eV, which corresponds to the band gap energy of the amorphous ZnRh2O4. This is the first discovery of a p-type amorphous oxide and the demonstration of p-n junction all composed of amorphous oxide semiconductors.

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X-ray Amorphous P-type Conductive Oxide; ZnRh2O4

  • Satoru Narushima (a1), Hiroshi Mizoguchi (a2), Hiromichi Ohta (a2), Masahiro Hirano (a2), Ken-ichi Shimizu (a3), Kazushige Ueda (a1), Toshio Kamiya (a1) and Hideo Hosono (a1) (a2)...

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