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Xafs Studies of Cr-Si-O Interfaces with Al and Polyimide by using Synchrotron Radiation

Published online by Cambridge University Press:  25 February 2011

Kiyoshi Ogata ,
Asao Nakano ,
Yasunori Narizuka ,
Takayoshi Watanabe  and
Tetsuya Yamazaki
Kiyoshi Ogata
Affiliation:
Production Engineering Research Laboratory, Hitachi, Ltd. 292 Yoshida-cho, Totsuka-ku, Yokohama 244, Japan
Asao Nakano
Affiliation:
Production Engineering Research Laboratory, Hitachi, Ltd. 292 Yoshida-cho, Totsuka-ku, Yokohama 244, Japan
Yasunori Narizuka
Affiliation:
Production Engineering Research Laboratory, Hitachi, Ltd. 292 Yoshida-cho, Totsuka-ku, Yokohama 244, Japan
Takayoshi Watanabe
Affiliation:
Production Engineering Research Laboratory, Hitachi, Ltd. 292 Yoshida-cho, Totsuka-ku, Yokohama 244, Japan
Tetsuya Yamazaki
Affiliation:
Production Engineering Research Laboratory, Hitachi, Ltd. 292 Yoshida-cho, Totsuka-ku, Yokohama 244, Japan
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Abstract

The structure change of a Cr-Si-O thin film with regard to heat-treatment was investigated not only by the transmission XAFS method but by the surface sensitive XAFS method using synchrotron radiation. As a result of transmission XAFS, the Cr-Si-O thin film as sputtered has an amorphous structure like a mixture of SiO2, Cr and CrSix. After heat-treatment to 650 K, Si-Cr bonds decreased and Si-O and Cr-Cr bonds increased. CrSix is unstable in the system. The interfacial studies by the surface XAFS method showed i) at the interface with polyimide, there is a thin layer which is dominantly made of Cr2O3 and ii) at the interface with Al, Cr atoms are mainly coordinated to Cr. Analyses by the XAFS method gave consistent results with chemical analyses by x-ray photoelectron spei roscopy and observation by transmission electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 593
Copyright
Copyright © Materials Research Society 1992

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References

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