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Wide-gap P-type Conductive Properties in Layered Oxychalcogenides

Published online by Cambridge University Press:  11 February 2011

Kazushige Ueda ,
Kouhei Takafuji ,
Hidenori Hiramatsu ,
Hiromichi Ohta ,
Masahiro Hirano ,
Hideo Hosono  and
Hiroshi Kawazoe
Kazushige Ueda
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226–8503, JAPAN
Kouhei Takafuji
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226–8503, JAPAN
Hidenori Hiramatsu
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226–8503, JAPAN Hosono Project, ERATO, JST, KSP C-1232, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, JAPAN
Hiromichi Ohta
Affiliation:
Hosono Project, ERATO, JST, KSP C-1232, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, JAPAN
Masahiro Hirano
Affiliation:
Hosono Project, ERATO, JST, KSP C-1232, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, JAPAN
Hideo Hosono
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226–8503, JAPAN Hosono Project, ERATO, JST, KSP C-1232, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, JAPAN
Hiroshi Kawazoe
Affiliation:
R&D Center, HOYA Corporation, 3–3–1 Musashino, Akishima 196–8510, JAPAN
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Abstract

Several Cu(I)-containing layered oxysulfides were selected as candidates for wide-gap p-type semiconductors by extending a concept of a materials design for transparent p-type conducting oxides. The electrical and optical properties of the selected oxysulfides were investigated, and their electronic structures were analyzed by energy band calculations. LaCuOS, Sr2Cu2ZnO2S2 and Sr2CuGaO3S were found to be wide-gap p-type semiconductors, and LaCuOS showed the largest energy gap (Eg=3.1eV) among these layered oxysulfides. It was also found that LaCuOS shows band edge emission under uv excitation at room temperature, which is consistent with the results of the energy band calculations that LaCuOS has a direct-allowed-type energy gap at Γ point. In further materials research, analogous layered oxychalcogenides such as LaCuOSe and LnCuOS (Ln=Pr, Nd) were found to show similar optical and electrical properties to those of LaCuOS. Therefore, it is considered that the layered crystal structure and the electronic structure are responsible for the wide-gap p-type conductive properties in these materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 747: Symposia T/V – Crystalline Oxides on Semiconductors – Interfacial Issues for Oxide-Based Electronics , 2002 , V2.1
Copyright
Copyright © Materials Research Society 2003

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References

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