Hostname: page-component-76fb5796d-r6qrq Total loading time: 0 Render date: 2024-04-26T12:02:01.414Z Has data issue: false hasContentIssue false
  • English
  • Français

Wide GAP a-SiC:H Alloys for Novel Photovoltaic-Electrochromic Window Coatings

Published online by Cambridge University Press:  15 February 2011

John N. Bullock ,
Yueqin Xu ,
David Benson  and
Howard M. Branz
John N. Bullock
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401.
Yueqin Xu
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401.
David Benson
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401.
Howard M. Branz
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401.
Get access

Abstract

Self-powered “smart” windows utilize an electro-optic transmittance modulator based on electrochromic (EC) thin films that exhibit reversible and controlled changes in optical properties with an applied voltage between 0.7 and 2.0 V. Existing window designs require an external electrical connection, which may be economically unfeasible. This problem is solved by the tandem photovoltaic-electrochromic device, in which a wide-gap amorphous silicon-based alloy photovoltaic device is deposited together with an electrochromic optical transmittance modulator in a monolithic device on a single substrate. In this paper, we discuss our proposed monolithic photovoltaic-electrochromic device.

We also present studies of transparent, wide-gap (1.8 to 2.2 eV) amorphous silicon-carbon thin films and p-i-n devices designed for use in the photovoltaic-electrochromic device. These photovoltaic cells can operate at low current (<1 mA/cm2) because a total injected charge of only 60 μC/cm2 will darken the EC layer to a visible transmission of 5%, but they need a high open-circuit voltage (>1.0 V) and high transparency (≈70%). We present our progress toward these design targetxxss.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 589
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Benson, D. K. and Branz, H. M., Sol. Energy Mater. (1995).Google Scholar
2. Bartovics, W. A., Masters Thesis, MIT, 1984.Google Scholar
3. Reilly, S., Arasteh, D., and Selkowitz, S., Sol. Energy Mater. (1991).Google Scholar
4. Selkowitz, S. and Lampert, C. M., in Large-area Chromogenics: Materials and devices for transmittance control, edited by Lampert, C. M. a. G., C. G., (Optical Engineering Press-SPIE, Bellingham, WA, 1990), p. 504.Google Scholar
5. Beni, G. and Shay, J. L., in Advances in Image Pickup and Display; Vol. 5 (Academic Press, Inc., 1982), p. 83.Google Scholar
6. Branz, H. M., Crandall, R. S., and Tracy, C. E., U.S. Patent No. 5 377 037 (1994).Google Scholar
7. Deb, S. K., Appl. Opt., Suppl. 27, 801 (1969).Google Scholar
8. Deb, S. K., Philos. Mag. 27, 801 (1973).Google Scholar
9. Faughnan, B. W., RCA Review 36, 177 (1975).Google Scholar
10. Schirmer, O. F., J. Electrochem. Soc. 124, 749 (1977).Google Scholar
11. Rauh, R. D. and Cogan, S. F., J. Electrochem. Soc. 140, 378–386 (1993).Google Scholar
12. Li, Y.-M., Mater. Res. Soc. Proc. 297, 803–814 (1993).Google Scholar