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What is Behind the Inverse Hall-Petch Behavior in Nanocrystalline Materials?

Published online by Cambridge University Press:  26 July 2012

Christopher Carlton  and
P. J. Ferreira
Christopher Carlton
Affiliation:
carltonce@mail.utexas.edu, University of Texas at Austin, University of Texas at Austin, 1 University Station, Austin, TX, 78705, United States
P. J. Ferreira
Affiliation:
ferreira@mail.utexas.edu, University of Texas at Austin, Material Science and Engineering Program, 1 University Station, Austin, TX, 78705, United States
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Abstract

An inverse Hall-Petch effect has been observed for nanocrystalline materials by a large number of researchers. This result implies that nanocrystalline materials get softer as grain size is reduced below a critical value. Postulated explanations for this behavior include dislocation based mechanisms and diffusion based mechanisms. In this paper, we report an explanation for the inverse Hall-Petch effect based on the statistical absorption of dislocations by grain boundaries, showing that the yield strength is both dependent on strain rate and temperature, and that it deviates from the Hall-Petch relationship at a critical grain size.

Keywords

nanoscalegrain sizedislocations
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 976: Symposium EE – Size Effects in the Deformation of Materials – Experiments and Modeling , 2006 , 0976-EE01-04
Copyright
Copyright © Materials Research Society 2007

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