Skip to main content Accessibility help

What Does Self-Diffusion Tell Us about Ultra Shallow Junctions?

  • Ant Ural (a1), Serene Koh (a2), P. B. Griffin (a2) and J. D. Plummer (a2)


Understanding the coupling between native point defects and dopants at high concentrations in silicon will be key to ultra shallow junction formation in silicon technology. Other effects, such as transient enhanced diffusion (TED) will become less important. In this paper, we first describe how thermodynamic properties of the two native point defects in silicon, namely vacancies and self-interstitials, have been obtained by studying self-diffusion in isotopically enriched structures. We then discuss what this tells us about dopant diffusion. In particular, we show that the diffusion of high concentration shallow dopant profiles is determined by the competition between the flux of mobile dopants and those of the native point defects. These fluxes are proportional to the interstitial or vacancy components of dopant and self-diffusion, respectively. This is why understanding the microscopic mechanisms of silicon self-diffusion is important in predicting and modeling the diffusion of ultra shallow dopant profiles. As an example, we show experimental data and simulation fits of how these coupling effects play a role in the annealing of shallow BF2 ion implantation profiles. We conclude that relatively low temperature furnace cycles following high temperature rapid thermal anneals (RTA) have a significant effect on the minimum junction depth that can be achieved.



Hide All
1. Ural, A., Griffin, P. B., and Plummer, J. D., Appl. Phys. Lett. 73, 1706 (1998).10.1063/1.122252
2. Ural, Ant, Griffin, Peter B., and Plummer, James D., J. Appl. Phys. 85, 6440 (1999).10.1063/1.370285
3. Ural, A., Griffin, P. B., and Plummer, J. D. in Si Front-End Processing--Physics and Technology of Dopant-Defect Interactions, edited by Gossmann, H-J. L., Haynes, T. E., Law, M. E., Larsen, A. N., and Odanaka, S. (Mater. Res. Soc. Proc. 568, Warrendale PA, 1999) p.97.
4. Ural, Ant. Griffin, P. B., and Plummer, J. D., Phys. Rev. Lett. 83, 3454 (1999).10.1103/PhysRevLett.83.3454
5. Arienzo, W. A. Orr, Glang, R., Lever, R. F., and Lewis, R. K., J. Appl. Phys. 63, 116 (1988).10.1063/1.340500
6. Mathiot, D. and Pfister, J. C., J. Appl. Phys. 55, 3518 (1984).10.1063/1.332941
7. Mathiot, D. and Pfister, J. C., Appl. Phys. Lett. 47, 962 (1985).10.1063/1.95944
8. Tan, T. Y. and Gosele, U., Appl. Phys. A 37, 1 (1985).10.1007/BF00617863
9. Hu, S. M., Fahey, P., and Dutton, R. W., J. Appl. Phys. 54, 6912 (1983).10.1063/1.331998
10. Cowern, N. E. B., Walle, G. F. A. van de, Gravesteijn, D. J., Vriezema, C. J., Phys. Rev. Lett. 67, 212 (1991).10.1103/PhysRevLett.67.212
11. Bracht, H., Stolwijk, N. A., and Mehrer, H., Phys. Rev. B 52, 16542 (1995).10.1103/PhysRevB.52.16542
12. Ural, A., unpublished.

Related content

Powered by UNSILO

What Does Self-Diffusion Tell Us about Ultra Shallow Junctions?

  • Ant Ural (a1), Serene Koh (a2), P. B. Griffin (a2) and J. D. Plummer (a2)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.