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Wet-Process Molecular Planting in A Specific Site on Silicon with Si-C Covalent Bonds

Published online by Cambridge University Press:  11 February 2011

Hirokazu Tada
Affiliation:
Institute for Molecular Science, Okazaki National Research Institutes, Myodaiji, Oakzaki 444–8585, Japan Department of Structural Molecular Science, The Graduate University for Advanced Studies, Myodaiji, Okazaki 444–8585, Japan
Masato Ara
Affiliation:
Department of Structural Molecular Science, The Graduate University for Advanced Studies, Myodaiji, Okazaki 444–8585, Japan
Shoji Tanaka
Affiliation:
Institute for Molecular Science, Okazaki National Research Institutes, Myodaiji, Oakzaki 444–8585, Japan Department of Structural Molecular Science, The Graduate University for Advanced Studies, Myodaiji, Okazaki 444–8585, Japan
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Abstract

Alkyl monolayers anchored covalently on silicon were prepared through the reaction between 1-alkenes and hydrogen-terminated silicon (111) surfaces. The 2D-patterning of the surface was done by local oxidation with an atomic force microscope (AFM) and 3D-molecular assemblies were fabricated by immobilization of molecules in a specific site of the patterned surface. The surfaces were anodized with a contact-mode AFM by applying a positive bias voltage to the surface with respect to the platinum-coated cantilever under ambient conditions, which resulted in nanometer-scale oxidation of surfaces. The anodized areas were etched and terminated with hydrogen atoms by NH4F solution, in which we could immobilize various molecules having C=C bonds. We put arylamine molecules to which organic dyes such as fluoroscein were anchored. The intensity of luminescence varied depending on dopant concentration of substrates. Luminescence was very weak on highly-doped silicon possibly due to effective energy transfer from dyes to substrates. The method demonstrated is one of the promising ways to fabricate 3D-assemblies of molecular-scale electronic devices with a stable interface on silicon.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Joachim, C., Gimzewski, J. K., and Aviram, A., Nature 408, 541 (2000).Google Scholar
2. Wolkow, R. A., Ann. Rev. Phys. Chem. 50, 413 (1999).Google Scholar
3. Yoshinobu, J., Tsuda, H., Onchi, M., and Nishijima, M., J. Chem. Phys. 87, 7332 (1987).Google Scholar
4. Hovis, J. S. and Hamers, R. J., J. Phys. Chem. B102, 687 (1998).Google Scholar
5. Lopinski, G P., Wayner, D. D. M., and Wolkow, R. A., Nature 406, 48 (2000).Google Scholar
6. Linford, M. R. and Chidsey, C. E. D., J. Am. Chem. Soc. 115, 1231 (1993).Google Scholar
7. Linford, M. R., Fenter, R, Eisenberger, R M., and Chidsey, C. E. D., J. Am. Chem. Soc. 117, 3145(1995).Google Scholar
8. Bansai, A., Li, X., Lauermann, I., Lewis, N. S., Yi, S. I., and Weinberg, W. H., J. Am. Chem. Soc. 118, 7225 (1996).Google Scholar
9. Sieval, A. B., Vleeming, V., Zuilhof, H., and Sudhölter, E. J. R., Langmuir 15, 8288 (1999).Google Scholar
10. Yamada, T., Takáno, N., Yamada, K., Yoshitomi, S., Inoue, T., and Osaka, T., Jpn. J. Appl. Phys. 40, 4845 (2001).Google Scholar
11. Lie, L. H., Paiole, S. N., Hart, E. R., Houlton, A., and Horrocks, B. R., J. Phys. Chem. B106, 113(2002).Google Scholar
12. Ara, M., Graaf, H. and Tada, H., Appl. Phys. Lett. 80, 2565 (2002).Google Scholar
13. Ara, M., Graaf, H. and Tada, H., Jpn. J. Appl. Phys. 41, 4894 (2002).Google Scholar
14. Wade, C. P. and Chidsey, C. E. D., Appl. Phys. Lett. 71, 1679 (1997).Google Scholar
15. Suto, S., Uchida, W., Yashima, M. and Goto, T., Phys. Rev. B35, 4393 (1987).Google Scholar