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Waveguide Formation in Silica by Implantation with Si, P and Geions

  • Patrick W. Leech (a1) and Mark C. Ridgway (a2)

Abstract

Low loss channel waveguides have been formed in substrates of fused silica and silica-on-silicon by the implantation of 5 MeV Si, P and Ge ions. The silica-on-silicon substrates comprised an upper core layer which was doped with either 3 or 7% Ge. Annealing of the implanted silica-on-silicon waveguides has defined a narrow range of temperature (500 - 600°C) over which the loss coefficient, α, was at a minimum of 0.10 - 0.20 dB/cm at wavelengths of λ = 1300 and 1550 nm. For the fused silica substrates, a similar minimum loss ( 0.10 - 0.20 dB/cm) was measured at 1300 nm. However, at λ = 1550 nm the value of α was significantly increased because of an absorption edge in the fused silica (Suprasil-2) at -1500 nm. The results show that the optical loss characteristics of the waveguides were essentially independent of the ion species.

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1 Koshiba, M., Electronics and Communications in Japan, 77(11), 159, (1994).
2 Leech, P.W., Faith, M., Kemeny, P.C., Ridgway, M.C. and Elliman, R.G., Reeves, G.K. and Zhou, W., Nuclear Instruments and Methods in Physics Research, In Press, (1995).
3 Leech, P.W. and Ridgway, M., Electronics Letters, 31 (15), 1238, (1995).
4 Townsend, P.D., Chandler, P.J. and Zhang, L., Optical Effects of Ion Implantation. (Cambridge University Press, Cambridge, 1994), p.52.
5 Faik, A.B., Chandler, P.J., Townsend, P.D., Radiation Effects, 98 (24), 223., (1986).
6 Albert, J., Hill, K.O., Malo, B., Johnson, D.C., Brebner, J.L., Trudeau, Y.B. and Kajrys, G., Appl.Phys.Lett, 60 (2), 148, (1992).
7 Albert, J., Malo, B., Hill, K.O., Johnson, D.C., Brebner, J.L. and Leonelli, R., Optics Letters, 17, (23), 1652, (1992).
8 Johnson, CM., Ridgway, M.C. and Leech, P.W., to be published.
9 Chandler, P.J., Zhang, L. and Townsend, P.D., Nuclear Instruments and Methods in Physics Research, B46, 69, (1990).

Waveguide Formation in Silica by Implantation with Si, P and Geions

  • Patrick W. Leech (a1) and Mark C. Ridgway (a2)

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