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Wafer Fusion ofGaSb to GaAs

Published online by Cambridge University Press:  02 August 2011

C.A. Wang ,
Z.L. Liau ,
D.A. Shiau  and
P.M. Nitishin
C.A. Wang
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108
Z.L. Liau
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108
D.A. Shiau
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108
P.M. Nitishin
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108
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Abstract

Atomic wafer fusion of GaSb to GaAs, and the transfer of epitaxial GaSb/GaInAsSb/GaSb heterostructures to GaAs by fusion and substrate removal are demonstrated for the first time. Wafers and epilayers were fused with or without application of mechanical pressure at temperatures as low as 350 °C. A periodic pattern of grooves etched into the GaAs wafer and an overpressure of As and Sb vapor were used to improve covalent bonding. Varying degrees of mass transport and covalent bond formation between wafers were observed in cleaved crosssections under high-resolution scanning electron microscopy. Epilayers fused without pressure application exhibited significantly better structural and optical properties compared to those fused with pressure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 768: Symposium G – Integration of Heterogeneous Thin-Film Materials and Devices , 2003 , G4.3
Copyright
Copyright © Materials Research Society 2003

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