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Wafer bonding of Si for hybrid photonic devices

Published online by Cambridge University Press:  04 December 2014

Eric Le Bourhis
Affiliation:
Institut P’, CNRS - Université de Poitiers – ENSMA - UPR 3346, SP2MI-Téléport 2-Bd Marie et Pierre Curie, B.P. 30179, 86962 Futuroscope-Chasseneuil Cedex, France
Konstantin Pantzas
Affiliation:
Institut P’, CNRS - Université de Poitiers – ENSMA - UPR 3346, SP2MI-Téléport 2-Bd Marie et Pierre Curie, B.P. 30179, 86962 Futuroscope-Chasseneuil Cedex, France Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, Route de Nozay, 91460 Marcoussis, France
Gilles Patriarche
Affiliation:
Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, Route de Nozay, 91460 Marcoussis, France
Anne Talneau
Affiliation:
Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, Route de Nozay, 91460 Marcoussis, France
Isabelle Sagnes
Affiliation:
Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, Route de Nozay, 91460 Marcoussis, France
David Troadec
Affiliation:
Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), Avenue Poincaré, 59652 Villeneuve d'Ascq cedex, France
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Abstract

InP membranes have been bonded both oxide free and oxide mediated onto a Si substrate. The mechanical responses of the obtained thin (0.4 µm) membranes could be tested by nanoindentation and compared. Delamination of the membrane was observed to occur when the indenting load reached 55 mN for an oxide mediated bonded structure and 80 mN for an oxide free bonded one. Weibull analysis of these events yielded a modulus m of magnitude 6 to 10, indicating that delamination fracture is relatively predictable with a stronger interface obtained in oxide free approach. Delamination of the membrane is the result of constraint of plastic flow by the InP/Si interface. Membrane rotation is induced and increases with the indentation load, until it is sufficient to induce and propagate an interfacial crack.

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Articles
Copyright
Copyright © Materials Research Society 2014 

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References

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