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W2B based High Thermal Stability Ohmic Contacts to n-GaN

Published online by Cambridge University Press:  01 February 2011

Rohit Khanna ,
S J Pearton ,
C J Kao ,
I I Kravchenko ,
F Ren ,
G C Chi ,
A Dabiran  and
A Osinsky
Rohit Khanna
Affiliation:
rohit25@ufl.edu, University of Florida, 1111 SW, 16th Avenue, Apt#1, Gainesville, Florida, 32601, United States
S J Pearton
Affiliation:
rohit25@ufl.edu, University of Florida, Department of Materials Science and Engineering
C J Kao
Affiliation:
rohit25@ufl.edu, National Central University, Department of Electrical Engineering, Taiwan
I I Kravchenko
Affiliation:
rohit25@ufl.edu, University of Florida, Department of Chemical Engineering, United States
F Ren
Affiliation:
rohit25@ufl.edu, University of Florida, Department of Chemical Engineering, United States
G C Chi
Affiliation:
rohit25@ufl.edu, National Central University, Department of Electrical Engineering, Taiwan
A Dabiran
Affiliation:
rohit25@ufl.edu, SVT Associates, Eden Prairie, MN, United States
A Osinsky
Affiliation:
rohit25@ufl.edu, SVT Associates, Eden Prairie, MN, United States
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Abstract

A novel metallization scheme for Ohmic contact (Ti/Al/ W2B /Ti/Au) to n-GaN using high temperature boride was studied using contact resistance, scanning electron microscopy and Auger Electron Spectroscopy measurements. A minimum contact resistance of 7×10-6 Ω.cm2 was achieved for W2B based scheme at an annealing temperature of 800 °C. Contact resistances were found to be essentially independent of measurement temperature, indicating that tunneling plays a dominant role in the current transport. The outdiffusion of Ti to the surface at temperatures of ∼500°C, and at 800°C the onset of intermixing of Al within the contact was found to occur. By 1000°C, the contact showed a reacted appearance and AES showed almost complete intermixing of the metallization. The reliability measurements for the contact resistance of W2B based contact showed excellent stability for extended periods at 200°C, which simulates the type of device operating temperature that might be expected for operation of GaN-based power electronic devices.

Keywords

nitrideannealingIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF14-04
Copyright
Copyright © Materials Research Society 2006

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References

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