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W, WSix and Ti/Al Low Resistance Ohmic Contacts to InGaN, InN and InAlN

Published online by Cambridge University Press:  10 February 2011

C.B. Vartuli ,
S.J. Pearton ,
C.R. Abernathy ,
J.D. MacKenzie ,
R.J. Shul ,
J.C. Zolper ,
M.L. Lovejoy ,
A.G. Baca  and
M. Hagerott-Crawford
C.B. Vartuli
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville FL 32611
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville FL 32611
C.R. Abernathy
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville FL 32611
J.D. MacKenzie
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville FL 32611
R.J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185–0603
J.C. Zolper
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185–0603
M.L. Lovejoy
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185–0603
A.G. Baca
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185–0603
M. Hagerott-Crawford
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185–0603
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Abstract

W, WSi0.44 and Ti/Al contacts were examined on n+ In0.65Ga0.35N, InN and In0.75Al0.25N. W was found to produce low specific contact resistance (Qc ˜ 10−7 Ω cm2) ohmic contacts to InGaN, with significant reaction between metal and semiconductor at 900 °C mainly due to out diffusion of In and N. WSix showed an as-deposited Qc of 4×10−7 Ω cm2 but this degraded significantly with subsequent annealing. Ti/Al contacts were stable to Ω 600 °C (Qc, ˜ 4×10−7 Ω cm2 at ≤600 °C). The surfaces of these contacts remain smooth to 800 °C for W and WSix and 650 °C for Ti/Al. InN contacted with W and Ti/Al produced ohmic contacts with Qc ˜ 10−7 Ω cm2 and for WSix Qc ˜ Ω cm2.All remained smooth to ˜ 600 °C, but exhibited significant interdiffusion of In, N, W and Ti respectively at higher temperatures. The contact resistances for all three metallization schemes were ≥ 10−4 Ω.cm2 on InAIN, and degrades with subsequent annealing. The Ti/Al was found to react with the InA1N above 400 °C, causing the contact resistance to increase rapidly. W and WSix proved to be more stable with Qc ˜ 10−2 and 10−3 Ω cm2 up to 650 °C and 700 °C respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 373
Copyright
Copyright © Materials Research Society 1996

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