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W, WSix and Ti/Al Low Resistance Ohmic Contacts to InGaN, InN and InAlN

  • C.B. Vartuli (a1), S.J. Pearton (a1), C.R. Abernathy (a1), J.D. MacKenzie (a1), R.J. Shul (a2), J.C. Zolper (a2), M.L. Lovejoy (a2), A.G. Baca (a2) and M. Hagerott-Crawford (a2)...

Abstract

W, WSi0.44 and Ti/Al contacts were examined on n+ In0.65Ga0.35N, InN and In0.75Al0.25N. W was found to produce low specific contact resistance (Qc ˜ 10−7 Ω cm2) ohmic contacts to InGaN, with significant reaction between metal and semiconductor at 900 °C mainly due to out diffusion of In and N. WSix showed an as-deposited Qc of 4×10−7 Ω cm2 but this degraded significantly with subsequent annealing. Ti/Al contacts were stable to Ω 600 °C (Qc, ˜ 4×10−7 Ω cm2 at ≤600 °C). The surfaces of these contacts remain smooth to 800 °C for W and WSix and 650 °C for Ti/Al. InN contacted with W and Ti/Al produced ohmic contacts with Qc ˜ 10−7 Ω cm2 and for WSix Qc ˜ Ω cm2.All remained smooth to ˜ 600 °C, but exhibited significant interdiffusion of In, N, W and Ti respectively at higher temperatures. The contact resistances for all three metallization schemes were ≥ 10−4 Ω.cm2 on InAIN, and degrades with subsequent annealing. The Ti/Al was found to react with the InA1N above 400 °C, causing the contact resistance to increase rapidly. W and WSix proved to be more stable with Qc ˜ 10−2 and 10−3 Ω cm2 up to 650 °C and 700 °C respectively.

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W, WSix and Ti/Al Low Resistance Ohmic Contacts to InGaN, InN and InAlN

  • C.B. Vartuli (a1), S.J. Pearton (a1), C.R. Abernathy (a1), J.D. MacKenzie (a1), R.J. Shul (a2), J.C. Zolper (a2), M.L. Lovejoy (a2), A.G. Baca (a2) and M. Hagerott-Crawford (a2)...

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