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Void Elongation Phenomena Observed in Polycrystalline Cu Interconnects at a High Current Density Stressing Conditions

Published online by Cambridge University Press:  10 February 2011

S. Shingubara ,
S. Kajiwara ,
T. Osaka ,
H. Sakaue  and
T. Takahagi
S. Shingubara
Affiliation:
Hiroshima University, Dept. of Electrical Engineering, Kagamiyama 1–4–1, HigasM-hiroshima, 739Japan, e-mail: shingu@ipc.hiroshima-u.ac.jp
S. Kajiwara
Affiliation:
Hiroshima University, Dept. of Electrical Engineering, Kagamiyama 1–4–1, HigasM-hiroshima, 739Japan, e-mail: shingu@ipc.hiroshima-u.ac.jp
T. Osaka
Affiliation:
Hiroshima University, Dept. of Electrical Engineering, Kagamiyama 1–4–1, HigasM-hiroshima, 739Japan, e-mail: shingu@ipc.hiroshima-u.ac.jp
H. Sakaue
Affiliation:
Hiroshima University, Dept. of Electrical Engineering, Kagamiyama 1–4–1, HigasM-hiroshima, 739Japan, e-mail: shingu@ipc.hiroshima-u.ac.jp
T. Takahagi
Affiliation:
Hiroshima University, Dept. of Electrical Engineering, Kagamiyama 1–4–1, HigasM-hiroshima, 739Japan, e-mail: shingu@ipc.hiroshima-u.ac.jp
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Abstract

Formation and morphological change of voids induced by electromigration in polycrystalline Cu interconnects on TiN have been investigated at various current density conditions at elevated temperatures. At first voids were formed at grain boundaries, then they grew further to elongate in the electric field direction. Void elongation parameter (a ratio of void diameters in longitudinal to lateral directions to the electric field) was 2.53 when the current density was 9×106A/cm2, while it was 1.31 when the current density was 3×106A/cm2at 400°C, 50h. Occurrence of void elongation is enhanced with increase in current density, and its relationship to grain boundaries are discussed by FIB-SIM image analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 229
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Hu, C.-K., Luther, B., Kaufinan, F.B., Hummel, J., Uzoh, C., and Pearson, D.J. Thin Soud Films, vol. 262 pp. 84–92 (1995).Google Scholar
[2] Tao, J., Cheung, N. W., and Hu, C. IEEE Electron Device Letters, vol. 14, pp. 249–251 (1993).Google Scholar
[3] Shingubara, S., Fujiki, K., Sano, A., Sakaue, H., and Takahagi, T., in MATERIALS RELIABILITY IN MICROELECTRONICS IV, edited by Borgessen, P., Cobum, J.C., Sanchez, J.E., Rodbell, K.P. and Filter, W.R., Mat. Res. Soc. Symp. Proc. vol. 338, p. 441 (1994).Google Scholar
[4] Oates, A.S., and Barre, D.L., J. Electronic Materials, vol. 23, p. 63 (1994).Google Scholar
[5] Bower, A.F., and Freund, L.B., Mat. Res. Soc. Symp. Proc. vol. 391(1995) 177.Google Scholar