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VLS Growth of Si nanowhiskers on a H-terminated Si{111} surface

Published online by Cambridge University Press:  09 August 2011

N. Ozaki ,
Y. Ohno ,
S. Takeda  and
M. Hirata
N. Ozaki
Affiliation:
Department of Physics, Graduate School of Science, Osaka University 1–16 Machikane-yama, Toyonaka, Osaka 560–0043, Japan
Y. Ohno
Affiliation:
Department of Physics, Graduate School of Science, Osaka University 1–16 Machikane-yama, Toyonaka, Osaka 560–0043, Japan
S. Takeda
Affiliation:
Department of Physics, Graduate School of Science, Osaka University 1–16 Machikane-yama, Toyonaka, Osaka 560–0043, Japan
M. Hirata
Affiliation:
Department of Physics, Graduate School of Science, Osaka University 1–16 Machikane-yama, Toyonaka, Osaka 560–0043, Japan
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Abstract

We have grown Si nanowhiskers on a Si{1111} surface via the vapor-liquid-solid (VLS) mechanism. The minimum diameter of the crystalline is 3nm and is close to the critical value for the effect of quantum confinement. We have found that many whiskers grow epitaxially or non-epitaxially on the substrate along the 〈112〉 direction as well as the 〈111〉 direction.

In our growth procedure, we first deposited gold on a H-terminated Si{111} surface and prepared the molten catalysts of Au and Si at 500°C. Under the flow of high pressure silane gas, we have succeeded in producing the nanowhiskers without any extended defects. We present the details of the growth condition and discuss the growth mechanism of the nanowhiskers extending along the 〈112〉 direction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 305
Copyright
Copyright © Materials Research Society 1999

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