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Visualisation of Ge Condensation in SOI

Published online by Cambridge University Press:  01 February 2011

Kristel Fobelets ,
Benjamin Vincent ,
Munir Ahmad ,
Astolfi Christofi  and
David McPhail
Kristel Fobelets
Affiliation:
k.fobelets@ic.ac.uk, Imperial College London, Electrical Engineering Department, Exhibition Road, London, -, SW7 2BT, United Kingdom
Benjamin Vincent
Affiliation:
bv_vincent@yahoo.fr, Imperial College London, Electrical and Electronic Engineering, Exhibition Road, London, London, SW7 2BT, United Kingdom
Munir Ahmad
Affiliation:
m.m.ahmad@ic.ac.uk, Imperial College London, Electrical and Electronic Engineering, Exhibition Road, London, London, SW7 2BT, United Kingdom
Astolfi Christofi
Affiliation:
a.christofi@ic.ac.uk, Imperial College London, Materials, Exhibition Road, London, London, SW7 2BT, United Kingdom
David McPhail
Affiliation:
d.mcphail@ic.ac.uk, Imperial College London, Materials, Exhibition Road, London, London, SW7 2BT, United Kingdom
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Abstract

We use a novel technique CABOOM – Characterisation of Alloy concentration via Beveling, Oxidation and Optical Microscopy – to visualize the change of the Ge concentration sandwiched between two SiO2 layers during the Ge condensation process. CABOOM is very sensitive to variations in the gradient of the Ge concentration in the SiGe layer and thus gives a fast and simple way to interpret the condensation process. We present a systematic study of Ge condensation in a 120nm thick Si0.92Ge0.08 layer on a 60 nm Si body SOI (silicon-on-insulator) as a function of oxidation temperature and time, using CABOOM, SIMS and XRD. CABOOM shows the non-linear variation of the Ge diffusion as a function of process time.

Keywords

Geoxidationoptical
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 913: Symposium D – Transistor Scaling – Methods, Materials and Modeling , 2006 , 0913-D01-09
Copyright
Copyright © Materials Research Society 2006

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References

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