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Visible Electroluminescence from Pn Junction Type μc-Sic/ Porous Si / c-Si Structures

Published online by Cambridge University Press:  28 February 2011

T. Futagi ,
T. Matsumoto ,
M. Katsuno ,
Y. Ohta ,
H. Mimura  and
K. Kitamura
T. Futagi
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, 1618 Ida, Nakahara-ku, Kawasaki 211, Japan
T. Matsumoto
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, 1618 Ida, Nakahara-ku, Kawasaki 211, Japan
M. Katsuno
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, 1618 Ida, Nakahara-ku, Kawasaki 211, Japan
Y. Ohta
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, 1618 Ida, Nakahara-ku, Kawasaki 211, Japan
H. Mimura
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, 1618 Ida, Nakahara-ku, Kawasaki 211, Japan
K. Kitamura
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, 1618 Ida, Nakahara-ku, Kawasaki 211, Japan
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Abstract

We have fabricated two kinds of n-type microcrystalline silicon carbon (μc-SiC) / porous silicon (PS) / p-type crystalline silicon (c-Si) pn junctions and demonstrated a visible light emission from them. We have observed three types of visible light emission; an uniform red light emission at a forward current above 12mA/cm2 for the pn junction using a 0.2–0.4 Qcm c-Si substrate, and a very weak white light emission at a forward current of about 90 mA/mm2 and a strong orange-red light emission at a forward current from 200 to 619 mA/mm2for the pn junction using a 3.5–4.5 Ωcm c-Si substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 389
Copyright
Copyright © Materials Research Society 1993

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References

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