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Visible Blind uv GaN Photovoltaic Detector Arrays Grown by rf Atomic Nitrogen Plasma MBE

  • J.M. Van Hove (a1), P.P. Chow (a1), R. Hickman (a1), A.M. Wowchak (a1), J.J. Klaassen (a1) and C.J. Polley (a1)...

Abstract

RF atomic nitrogen plasma molecular beam epitaxy (MBE) was used to deposit gallium nitride (GaN) p-i-n junction photovoltaic detectors on (0001) sapphire. The detectors consisted of a bottom contact layer n-type silicon doped to 5 × 1018 cm−3. The intrinsic layer was undoped and possessed an n-type background carrier concentration of 1 × 1016 cm−3. The top /p-GaN layer was doped with magnesium to give a Hall concentration of 5 × 1017 cm−3. The p-type GaN cathodoluminescence (CL) spectra showed a strong 372 nm emission level in contrast to the 430 nm level observed in MOCVD samples. These layers were fabricated into 1 × 10 element detector arrays using a chlorine-based reactive ion etch (RIE) and refractory metal ohmic contacts. Peak responsivity of 0.11 AAV on detectors without anti-reflection coating were obtained at the GaN bandedge of 360 nm. The ultraviolet (UV) to visible rejection ratio was greater than 103 − 104 and was accredited to the reduction of the yellow defect levels in MBE material. Preliminary results on Al x Ga1−x N detectors with responsivity peaks at 313 and 343 nm are presented as well.

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Visible Blind uv GaN Photovoltaic Detector Arrays Grown by rf Atomic Nitrogen Plasma MBE

  • J.M. Van Hove (a1), P.P. Chow (a1), R. Hickman (a1), A.M. Wowchak (a1), J.J. Klaassen (a1) and C.J. Polley (a1)...

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