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Violet Luminescence from Ge+-Implanted SiO2 Film on Si Substrate

Published online by Cambridge University Press:  03 September 2012

Xi-Mao Bao ,
Ting Gao ,
Feng Yan  and
Song Tong
Xi-Mao Bao
Affiliation:
Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China, xmbao@nju.edu.cn
Ting Gao
Affiliation:
Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China, xmbao@nju.edu.cn
Feng Yan
Affiliation:
Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China, xmbao@nju.edu.cn
Song Tong
Affiliation:
Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China, xmbao@nju.edu.cn
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Abstract

The SiO2 films thermally grown on crystalline Si were implanted with Ge ions at 60 keV with doses of l×1015 cm-2 and l×1016 cm-2, followed by thermal annealing at various temperatures. Under an ultraviolet excitation of 240 nm, the films exhibit intense violet luminescence with a peak at 396 nm. This peak is ascribed to the T1 → S0 transition in GeO formed during implantation and annealing. After 1100°C annealing, Ge clusters were formed in an SiO2 matrix and a PL peak at 840 nm, due to the quantum confinement effect, which was measured at low temperature (77 K).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 477
Copyright
Copyright © Materials Research Society 1997

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References

1. Lyer, S.S. and Xie, Y.H., Science 260, p.40 (1993).Google Scholar
2. Canham, L.T., Appl. Phys. Lett. 57, p. 1046 (1990).Google Scholar
3. Liao, L.S., Bao, X.M., Zheng, X.Q., Li, N.S. and Min, N.B., Appl. Phys. Lett. 68, p.850 (1996).Google Scholar
4. Neustruev, V.B., Condens. Matter 6, p. 6901 (1994).Google Scholar
5. Liao, L.S., Bao, X.M., Li, N.S., Zheng, X.Q. and Min, N.B., Solid Stat. Com. 97, p.1039 (1994).Google Scholar
6. Gallagher, M. and Osterberg, U., J. Appl. Phys. 74, p.2771 (1993).Google Scholar
7. Kanemitsu, Y., Uto, H. and Masumoto, Y., Appl. Phys. Lett. 61, p. 2187 (1992).Google Scholar
8. Sheglov, K.V., Yang, C.M., Vahala, K.J. and Atwater, H.A., Appl. Phys. Lett. 66, p. 745 (1995).Google Scholar
9. Muillenberg, G.E.., Handbook of X-Ray Photoelectron Spectroscopy, Perkin-Elmer, Eden Prarie, MN (1978).Google Scholar
10. Shmeisser, D. et al., Surface Sci. 172, p. 455 (1986).Google Scholar
11. Shalvoy, P.R., Phys. Rev. B. 15, p. 1680 (1977).Google Scholar
12. Gallagher, M. and Osterberg, U., Appl. Phys. Lett. 63, p. 2987 (1993).Google Scholar
13. Hosono, H., Abe, Y., Kinser, D.L., Weeks, R.A., Muto, K. and Kawazoe, H., Phys. ReV. B. 46, p. 11445 (1992).Google Scholar