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The Velocity-Field Characteristic Of Indium Nitride

Published online by Cambridge University Press:  10 February 2011

S. K. O'Leary ,
B. E. Foutz ,
M. S. Shur ,
L. F. Eastman  and
U. V. Bhapkar
S. K. O'Leary
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180–3590
B. E. Foutz
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853
M. S. Shur
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180–3590
L. F. Eastman
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853
U. V. Bhapkar
Affiliation:
Naval Surface Warfare Center, Code T44, Building 1470, Dahlgren, Virginia 22448
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Abstract

We determine the velocity-field characteristic of wurtzite indium nitride using an ensemble Monte Carlo approach. It is found that indium nitride exhibits an extremely high room temperature peak drift velocity, 4.2 × 107 cm/s, at a doping concentration of 1 × 1017 cm−3. This exceeds that of gallium nitride, 2.9 × 107 cm/s, by approximately 40 %. For our nominal parameter selections, the saturation drift velocity of indium nitride is found to be 1.8 × 107 cm/s. The device performance of this material, as characterized by the cut-off frequency, is found to superior to that of gallium nitride, gallium arsenide, and silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 845
Copyright
Copyright © Materials Research Society 1998

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References

[1] Strite, S. and Morkoç, H., J. Vac. Sci. Technol. B 10, 1237 (1992).Google Scholar
[2] Nakamura, S., Mater. Res. Bull. 22 (2), 29 ( 1997 ).10.1557/S088376940003253XGoogle Scholar
[3] Shur, M. S. and Khan, M. A., Mater. Res. Bull. 22 (2), 44 ( 1997 ).Google Scholar
[4] Littlejohn, M. A., Hauser, J. R., and Glisson, T. H., Appl. Phys. Lett. 26, 625 ( 1975 ).10.1063/1.88002Google Scholar
[5] Ferry, D. K., Phys. Rev. B 12, 2361 ( 1975 ).10.1103/PhysRevB.12.2361Google Scholar
[6] Gelmont, B., Kim, K., and Shur, M., J. Appl. Phys. 74, 1818 ( 1993 ).10.1063/1.354787Google Scholar
[7] Kolnik, J., Oğuzman, İ. H., Brennan, K. F., Wang, R., Ruden, P. P., and Wang, Y., J. Appl. Phys. 78, 1033 ( 1995 ).10.1063/1.360405Google Scholar
[8] Shur, M., Gelmont, B., and Khan, M. A., J. Electron. Mater. 25, 777 ( 1996 ).10.1007/BF02666636Google Scholar
[9] Bhapkar, U. V. and Shur, M. S., J. Appl. Phys. 82, 1649 ( 1997 ).10.1063/1.365963Google Scholar
[10] Shur, M., Physics of Semiconductor Devices ( Prentice-Hall, Englewood Cliffs, 1990 ).Google Scholar
[11] Other aspects of the InN velocity-field characteristic are to be presented in a forthcoming publication [12]Google Scholar
[12] O'Leary, S. K., Foutz, B. E., Shur, M. S., Bhapkar, U. V., and Eastman, L. F., J. Appl. Phys. ( in press ).Google Scholar
[13] Chin, V. W. L., Tansley, T. L., and Osotchan, T., J. Appl. Phys. 75, 7365 ( 1994).10.1063/1.356650Google Scholar
[14] Tsai, M.-H., Jenkins, D. W., Dow, J. D., and Kasowski, R. V., Phys. Rev. B 38, 1541 ( 1988 ).Google Scholar
[15] Lambrecht, W. R. L. and Segall, B., in Properties of Group III Nitrides, No. 11 EMIS Datareviews Series, edited by Edgar, J. H. ( Inspec, London, 1994 ), p. 151.Google Scholar
[16] Yang, T., Nakajima, S., and Sakai, S., Jpn. J. Appl. Phys., Part 1 34, 5912 ( 1995 ).Google Scholar
[17] Lambrecht, W. R. L. and Segall, B., in Properties of Group III Nitrides, No. 11 EMIS Datareviews Series, edited by Edgar, J. H. ( Inspec, London, 1994 ), p. 141.Google Scholar
[18] O'Leary, et al. [12], following Bhapkar, and Shur, [9], employed the band structure of Kolnik et al. [7] for the case of GaN.Google Scholar
[19] This selection of upper conduction band effective mass is larger than that found in Bhapkar, and Shur, [9] and O'Leary, et al. [12], and hence the results are expected to be different.Google Scholar
[20] Xu, J., Bernhardt, B. A., Shur, M., Chen, C.-H., and Peczalski, A., Appl. Phys. Lett. 49, 342 ( 1986 ).10.1063/1.97162Google Scholar