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Vapor Phase Epitaxy of GaN Using Gallium Tri-Chloride and Ammonia

Published online by Cambridge University Press:  10 February 2011

M. Yuri ,
T. Ueda ,
H. Lee ,
K. Itoh ,
T. Baba  and
J.S. Harris Jr.
M. Yuri
Affiliation:
Electronics Research Lab., Matsushita Electronics Corporation, Osaka 569, Japan
T. Ueda
Affiliation:
Electronics Research Lab., Matsushita Electronics Corporation, Osaka 569, Japan
H. Lee
Affiliation:
Solid State Electronics Lab., CIS 329, Stanford Univ., Stanford, CA 94305–4075
K. Itoh
Affiliation:
Solid State Electronics Lab., CIS 329, Stanford Univ., Stanford, CA 94305–4075
T. Baba
Affiliation:
Electronics Research Lab., Matsushita Electronics Corporation, Osaka 569, Japan
J.S. Harris Jr.
Affiliation:
Solid State Electronics Lab., CIS 329, Stanford Univ., Stanford, CA 94305–4075
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Abstract

GaN films with good crystalline quality are grown on sapphire by atmospheric pressure vapor phase epitaxy using gallium tri-chloride (GaCl3) and ammonia (NH3). Epitaxial growth is carried out over temperature and V/III-ratio ranges of 800–1000°C and 100–1000, respectively. Typical growth rate obtained is in the range of 5–20 μm/hr. The films grown below 925°C typically show three dimensional (island) growth, while above that temperature, continuous films are obtained. Films grown at 975°C with a V/III ratio > 300 exhibit a smooth surface. XRD analysis shows that the films are single crystal with hexagonal polytype. Strong band-edge photoluminescence is observed with a FWHM of 60 meV at room temperature and 25 meV at 77K. The results indicate that this simple growth technique is effective for growing high quality bulk GaN, which can be used as a substrate for subsequent epitaxy. In order to further improve the surface morphology, a preliminary experiment on GaN growth on a thin GaN buffer layer prepared by gas source MBE is also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 195
Copyright
Copyright © Materials Research Society 1996

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References

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