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Vanadium Dioxide Thin Films for Thermo-Optical Switching Applications

Published online by Cambridge University Press:  01 February 2011

Lijun Jiang  and
William N. Carr
Lijun Jiang
Affiliation:
New Jersey Institute of Technology Newark, NJ 07102, USA
William N. Carr
Affiliation:
New Jersey Institute of Technology Newark, NJ 07102, USA
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Abstract

Vanadium dioxide (VO2) thin films were fabricated by e-beam evaporation of vanadium thin films followed by thermal oxidation in oxygen ambient. The properties of the VO2 films were investigated for thermo-optical switching applications. Synthesized VO2 film displays a phase transition at 65 – 68 °C. It exhibits an abrupt change in optical reflectivity over the phase transition temperature range. Results for VO2 on a highly reflective metal layer are strongly dependent on the VO2 thickness. The optical switching has a major hysteresis of about 15 °C between the heating and cooling branches. The evolution of the surface morphology with the oxidation time was studied with a SEM. The VO2 film was patterned on microplatforms by metal lift-off technique. We conclude that the evaporation followed by oxidation is an effective method to produce active VO2 film for thermo-optical switching devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 785: Symposium D – Materials and Devices for Smart Systems , 2003 , D10.4
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Morin, F. J., Phys. Rev. Lett. 3 (34), 34 (1959)10.1103/PhysRevLett.3.34Google Scholar
2. De Natale, J. F., Hood, P. J., and Harker, A. B., J. Appl. Phys. 66 (12), 5844 (1989)10.1063/1.343605Google Scholar
3. Burkhardt, W., Christmann, T., Franke, S., Kriegseis, W., Meister, D., Meyer, B. K., Niessner, W., Schalch, D., and Scharmann, A., Thin Solid Films 402, 226 (2002)10.1016/S0040-6090(01)01603-0Google Scholar
4. Jerominek, H., Picard, F., and Vincent, D., Optical Engineering 32 (9), 2092 (1993)10.1117/12.143951Google Scholar
5. Chain, E. E., J. Vac. Sci. Technol. A, 5 (4), 1836 (1987)10.1116/1.574510Google Scholar
6. Nyberg, G. A., and Buhrman, R. A., Thin Solid Films 147, 111 (1987)10.1016/0040-6090(87)90277-XGoogle Scholar
7. Maruyama, T., and Ikuta, Y., J. Mat. Sci. 28, 5073 (1993)10.1007/BF00361182Google Scholar
8. Kim, D. H., and Kwok, H. S., Appl. Phys. Lett. 65 (25), 3188 (1994)10.1063/1.112476Google Scholar
9. Yin, D., Xu, N., Zhang, J., and Zheng, X., J. Phys. D: Appl. Phys. 29, 1051 (1996)10.1088/0022-3727/29/5/002Google Scholar
10. Verleur, H. W., Barker, A. S. Jr, and Berglund, C. N., Phys. Rev. 172 (3), 788 (1968)10.1103/PhysRev.172.788Google Scholar
11. Balberg, I., and Trokman, S., J. Appl. Phys. 46 (5), 2111 (1975)10.1063/1.321849Google Scholar
12. Haidinger, W., and Gross, D., Thin Solid Films 12, 433 (1972)10.1016/0040-6090(72)90108-3Google Scholar
13. Chain, E. E., J. Vac. Sci. Tech. A 4, 432 (1986)10.1116/1.573897Google Scholar
14. Thin Film Center Inc, 2745 E Via Rotonda, Tucson, AZ 85716, USAGoogle Scholar
15. Jiang, L., Ph.D. Dissertation, New Jersey Institute of Technology, 2003.Google Scholar