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Valence Band Offset at Amorphous Boron Carbide / Silicon Interfaces

  • Sean W. King (a1), Marc French (a1), Milt Jaehnig (a1) and Markus Kuhn (a1)


In order to understand the fundamental charge transport in a-B4-5C:H/Si heterostructure devices, we have utilized x-ray photoelectron spectroscopy to determine the valence band offset at interfaces formed by Plasma Enhanced Chemical Vapor Deposition of a-B4-5C:H on (100) Si. For such interfaces, we observed relatively small valence band offset values of ± 0.25 eV.



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