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Vacuum Ultraviolet Annealing of Tantalum Oxide Films Deposited at Room Temperature by Photo-Induced Cvd

Published online by Cambridge University Press:  10 February 2011

J.-Y. Zhang  and
I.W. Boyd
J.-Y. Zhang
Affiliation:
Electronic and Electrical Engineering, University College London, Torrington Place, London WCIE 7JE, U.K
I.W. Boyd
Affiliation:
Electronic and Electrical Engineering, University College London, Torrington Place, London WCIE 7JE, U.K
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Abstract

In this paper, we report the effect of vacuum ultraviolet (VUV) annealing of tantalum oxide films deposited on Si (100) and quartz at room temperature by photo-induced chemical vapour deposition using excimer lamps. The influences of annealing pressure and temperature on the structural and optical properties have been studied using ellipsometry, Fourier transform infrared spectroscopy (FTIR) and UV spectrophotometry. Under optimum annealing conditions, the refractive index of the films was found to be around 2.15, while a dielectric constant of 24, a breakdown field of 2.3 MV/cm and an optical transmittance in the visible region of the spectrum greater than 85% were obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 495
Copyright
Copyright © Materials Research Society 1999

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References

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