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Vacuum Chemical Epitaxy: High Throughput GaAs Epitaxy Without Arsine

Published online by Cambridge University Press:  28 February 2011

L. M. Fraas ,
G. R. Girard ,
V. S. Sundaram ,
Chris Master  and
Rick Stall
L. M. Fraas
Affiliation:
Boeing High Technology Center, P.O. Box 24969, Seattle, WA. 98124-6269
G. R. Girard
Affiliation:
Boeing High Technology Center, P.O. Box 24969, Seattle, WA. 98124-6269
V. S. Sundaram
Affiliation:
Boeing High Technology Center, P.O. Box 24969, Seattle, WA. 98124-6269
Chris Master
Affiliation:
Emcore, Inc. 35 Elizabeth Av- enue, Somerset, NJ 08873
Rick Stall
Affiliation:
Emcore, Inc. 35 Elizabeth Av- enue, Somerset, NJ 08873
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Abstract

Metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) are well established methods for growing epitaxial GaAs and AlGaAs films. However, MOCVD equip- ment uses the highly toxic gas, arsine, and MBE equipment is very costly and coats only one wafer at a time. We have developed a vacuum chemical epitaxy (VCE) reactor which avoids the use of arsine and allows multiple wafers to be coated in a production environment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 253
Copyright
Copyright © Materials Research Society 1989

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References

1. Fraas, L. M., J. Appl. Phys. 52, 6939 (1981).Google Scholar
2. Fraas, L.M., McLeod, P. S., Partain, L. D., Cohen, M. J., Cape, J. A., J. Electron. Mater. 15, 175 (1986).Google Scholar
3. Kondo, Kazuhiro, Ishikawa, Hideak, Sasa, Shigehiko, Sugiyama, Yoshihiro, and Hiyamizu, Satoshi, Jap. J. Appl. Phys. 25, L51 (1986).CrossRefGoogle Scholar
4. Fraas, L. M., McLeod, P. S., Partain, L. D., Weiss, R. E., and Cape, J. A., J. Crys. Growth 77, 386 (1986).Google Scholar
5. Fraas, L. M., McLeod, P. S., Partain, L. D., and Cape, J. A., J. Appl. Phys. 61, 2861 (1987).Google Scholar
6. Panish, M. B., J. Crys. Growth 81, 249 (1987).Google Scholar
7. Tsang, W. T., Appl. Phys. Let. 45, 1234 (1984).Google Scholar
8. Shih, H. D., Kim, B., and Wurtele, M., Electron. Lett. 23, 1141 (1987).Google Scholar
9. Kondo, K., Ishikawa, H., Fujii, T., and Hiyamizu, S., J. Electrochem. Soc. 134, 576C Abstract # 1773 SOA (1987).Google Scholar
10. Tsang, W. T., Appl. Phys. Lett. 48, 511 (1986).Google Scholar