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Vacancy-Type Defects in as-Grown and Proton-Irradiated 6H-SiC

Published online by Cambridge University Press:  10 February 2011

Werner Puff ,
Peter Mascher  and
Adam G. Balogh
Werner Puff
Affiliation:
Institut für Technische Physik, Technische Universität Graz, Petersgasse 16, A-8010 Graz, Austria, wp@ifk.tu-graz.ac.at
Peter Mascher
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ont. L8S 4L7, Canada
Adam G. Balogh
Affiliation:
FB Materialwissenschaft, FG Dünne Schichten, Technische Hochschule Darmstadt, Petersenstraße 23, 64287 Darmstadt, Germany
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Abstract

Annealing of defects in as-grown and proton irradiated bulk n- and p-type 6H-SiC has been investigated by positron lifetime spectroscopy and Doppler-broadening measurements. The grown-in defects do not anneal out until 1600 °C, whereas the radiation induced defects show three main annealing stages well below this temperature. During annealing, the formation of larger defect complexes can be observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 261
Copyright
Copyright © Materials Research Society 1998

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