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Vacancies in electron irradiated 6H silicon carbide studied by positron annihilation spectroscopy

Published online by Cambridge University Press:  01 February 2011

C. H. Lam ,
C. C. Ling ,
C. D. Beling ,
S. Fung ,
H. M. Weng  and
D. S. Hang
C. H. Lam
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China
C. C. Ling
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China
C. D. Beling
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China
S. Fung
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China
H. M. Weng
Affiliation:
Department of Physics, University of Science and Technology of China, Hefei, China
D. S. Hang
Affiliation:
Department of Physics, University of Nanjing, Nanjing, China E-mail correspondence: ccling@hku.hk
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Abstract

Positron lifetime spectroscopy was employed to study the as-electron-irradiated (10 MeV, 1×1018 cm-2) n-type 6H silicon carbide sample in the measuring temperature range of 15 K to 294 K. Isochronal annealing studies were also performed up to the temperature of 1373 K by carrying out the room temperature positron lifetime measurement. Negatively charged carbon vacancies and VCVSi divacancy were identified as the major vacancy type defects induced by the electron irradiation process. The concentration of the VCVSi divacancy was found to decrease dramatically after the 1973 K annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R3.19
Copyright
Copyright © Materials Research Society 2004

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