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Utilization of ß-Diketones for Etching and Cleaning of Metal Oxide and Sulfide Thin Films

Published online by Cambridge University Press:  22 February 2011

Steven R. Droes ,
A. Jain ,
T.T. Kodas ,
M.J. Hampden-Smith  and
R. Muenchausen
Steven R. Droes
Affiliation:
Chemical and Nuclear Engineering Department, University of New Mexico, Albuquerque, New Mexico, 87131, USA
A. Jain
Affiliation:
Chemical and Nuclear Engineering Department, University of New Mexico, Albuquerque, New Mexico, 87131, USA
T.T. Kodas
Affiliation:
Chemical and Nuclear Engineering Department, University of New Mexico, Albuquerque, New Mexico, 87131, USA
M.J. Hampden-Smith
Affiliation:
Chemistry Department, University of New Mexico, Albuquerque, New Mexico, 87131, USA
R. Muenchausen
Affiliation:
Los Alamos National Laboratory, Los Alamos, New Mexico, 87545, USA
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Abstract

We are examining dry processes for wafer cleaning and producing patterned thin films of metal oxides. This research focuses on determining the kinetics and mechanism of the reaction between ß-diketones and selected metal oxides. Preliminary experiments indicated that CuO, MgO, PbO and ZnO all react readily with 1,1,1,5,5,5-hexafluoroacetylacetone (hfacH). Thin films of CuO and MgO were fabricated via pulsed laser deposition, characterized by various analytical techniques such as Rutherford Backscattering Spectrometry and Scanning Electron Microscopy, etched using hfacH, and then further characterized. Etching rates for CuO and MgO were measured in order to develop a mechanistic understanding of the reaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 471
Copyright
Copyright © Materials Research Society 1993

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References

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