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Using Atomic Steps to Control Pentacene Crystal Orientation Texture

Published online by Cambridge University Press:  26 February 2011

Valerian Ignatescu ,
Jing-Chih M. Hsu ,
Alex C. Mayer ,
Jack M. Blakely  and
George G. Malliaras
Valerian Ignatescu
Affiliation:
vi22@cornell.edu, Cornell University, Materials Science and Engineering, B60 Bard Hall, Ithaca, NY, 14853, United States
Jing-Chih M. Hsu
Affiliation:
jmh233@cornell.edu, Cornell University, Materials Science and Engineering, 214 Bard Hall, Ithaca, NY, 14853, United States
Alex C. Mayer
Affiliation:
acmayer@stanford.edu, Cornell University, Materials Science and Engineering, 214 Bard Hall, Ithaca, NY, 14853, United States
Jack M. Blakely
Affiliation:
blakely@ccmr.cornell.edu, Cornell University, Materials Science and Engineering, 214 Bard Hall, Ithaca, NY, 14853, United States
George G. Malliaras
Affiliation:
ggm1@cornell.edu, Cornell University, Materials Science and Engineering, 214 Bard Hall, Ithaca, NY, 14853, United States
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Abstract

We have studied the effect of substrate atomic steps on the azimuthal alignment of vapor-deposited pentacene crystals. Si(111) substrates with a low miscut angle were annealed at high temperature in ultra-high vacuum before the pentacene deposition; this produced surfaces with atomically flat terraces and arrays of parallel atomic steps. AFM analysis shows that pentacene deposited on these heated samples, at a low deposition rate, results in significant alignment of the pentacene crystals along the atomic steps.

Keywords

scanning probe microscopy (SPM)Sigrain boundaries
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 965: Symposium S – Organic Electronics – Materials, Devices and Applications , 2006 , 0965-S14-07
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Dimitrakopoulos, C. D., Purushothaman, S., Kymissis, J., Callegari, A. and Shaw, J. M., Science 283, 822 (1999)Google Scholar
2. Dimitrakopoulos, C. D. and Melenfant, P. R. L., Adv. Mater. 14, 99 (2002)Google Scholar
3. Lee, S., Koo, B., Park, J.-G., Moon, H. and Kim, J. M., MRS Bulletin 31, 455 (2006)Google Scholar
4. Lee, J. Y., Roth, S., Park, Y. W., Appl. Phys. Lett. 88, 252106 (2006)Google Scholar
5. Ruiz, R., Papadimitratos, A., Mayer, A.C., and Malliaras, G., Adv. Mater. 17, 1795 (2005)Google Scholar
6. Yang, S. Y., Shin, K., and Park, C. E., Adv. Funct. Matter. 15, 1806 (2005)Google Scholar
7. Kang, S. J., Noh, M., Park, D. S., Kim, H. J., Whang, C. N., and Chang, C.-H., J. Appl. Phys. 95, 2293 (2004)Google Scholar
8. McCulloch, I., Nature Mater. 4, 583 (2005)Google Scholar
9. Ossó, J. O., Schreiber, F., Kruppa, V., Dosch, H., Garriga, M., Alonso, M. I., and Cerdeira, F., Adv. Funct. Mater. 12, 455 (2002)Google Scholar
10. Itaka, K., Myojin, N., Yamaguchi, M., and Koinuma, H., Jpn. J. Appl. Phys. 44, 6249 (2005)Google Scholar
11. Tanaka, S., Umbach, C. C., Blakely, J. M., Tromp, R. M., and Mankos, M., Appl. Phys. Lett. 69, 1235 (1969)Google Scholar
12. Ogino, T., Hibino, H. and Homma, Y., Appl. Surf. Sci. 117/118, 642 (1997)Google Scholar
13. Heringdorf, F. J. M. Z., Reuter, M. C., and Tromp, R. M., Nature 412, 517 (2001)Google Scholar
14. Ricardo, R., Nickel, B., Koch, N., Feldman, L. C., Haglund, R. F. Jr, Kahn, A., Family, F., and Scoles, G., Phys. Rev. Lett. 91, 136102 (2003)Google Scholar
15. Yang, Y.-N. and Williams, E. D., Phys. Rev. Lett. 72, 1862 (1994)Google Scholar
16. Ignatescu, V., Hsu, J.-C. M., Mayer, A. C., Blakely, J. M., Malliaras, G. G., Appl. Phys. Lett., accepted for publicationGoogle Scholar
17. Ogino, T., Hibino, H. and Homma, Y., Crit. Rev. Sol. State Mat. Sci. 24, 227 (1999)Google Scholar
18. Yashimoto, M., Maeda, T, Ohnishi, T., Koinuma, H., Ishiyama, O., Shinohara, M., Kubo, M., Miura, R. and Miyamoto, A., Appl. Phys. Lett. 67, 2615 (1995)Google Scholar
19. Shiratsuchi, Y., Yamamoto, M., and Kamada, Y., Jpn. J. Appl. Phys. 41, 5719 (2002)Google Scholar
20. Chang, K.-C., PhD Thesis, Cornell University, 2003 Google Scholar