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The Use of Tris(Trimethylsilyl)Arsine to Deposit GaAs by OMCVD

Published online by Cambridge University Press:  25 February 2011

Alan D. Berry ,
Andrew P. Purdy ,
Richard L. Wells ,
James W. Pasterczyk ,
James D. Johansen  and
Colin C. Pitt
Alan D. Berry
Affiliation:
Chemistry Division, Naval Research Laboratory, Washington, DC 20375-5000
Andrew P. Purdy
Affiliation:
Chemistry Division, Naval Research Laboratory, Washington, DC 20375-5000
Richard L. Wells
Affiliation:
Department of Chemistry, Duke University, Durham, NC 27706
James W. Pasterczyk
Affiliation:
Department of Chemistry, Duke University, Durham, NC 27706
James D. Johansen
Affiliation:
Department of Chemistry, Duke University, Durham, NC 27706
Colin C. Pitt
Affiliation:
Department of Chemistry, Duke University, Durham, NC 27706
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Abstract

Chemical vapor deposition experiments using (Me3Si)3As with either GaCl3 or Me3Ga at ambient pressure have produced films of GaAs on Si and semi-conducting GaAs substrates. The films have been characterized by X-ray diffraction and Auger electron spectroscopy, and each have small amounts of C and O impurities. No desired films were deposited from (C6F5)3GaAs(SiMe3)3 at 500°C and low pressures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 107
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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