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The Use of Tris(Trimethylsilyl)Arsine to Deposit GaAs by OMCVD

Published online by Cambridge University Press:  25 February 2011

Alan D. Berry ,
Andrew P. Purdy ,
Richard L. Wells ,
James W. Pasterczyk ,
James D. Johansen  and
Colin C. Pitt
Alan D. Berry
Affiliation:
Chemistry Division, Naval Research Laboratory, Washington, DC 20375-5000
Andrew P. Purdy
Affiliation:
Chemistry Division, Naval Research Laboratory, Washington, DC 20375-5000
Richard L. Wells
Affiliation:
Department of Chemistry, Duke University, Durham, NC 27706
James W. Pasterczyk
Affiliation:
Department of Chemistry, Duke University, Durham, NC 27706
James D. Johansen
Affiliation:
Department of Chemistry, Duke University, Durham, NC 27706
Colin C. Pitt
Affiliation:
Department of Chemistry, Duke University, Durham, NC 27706
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Abstract

Chemical vapor deposition experiments using (Me3Si)3As with either GaCl3 or Me3Ga at ambient pressure have produced films of GaAs on Si and semi-conducting GaAs substrates. The films have been characterized by X-ray diffraction and Auger electron spectroscopy, and each have small amounts of C and O impurities. No desired films were deposited from (C6F5)3GaAs(SiMe3)3 at 500°C and low pressures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 107
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Pitt, C.G., Purdy, A.P., Higa, K.T., and Wells, R.L., Organometallics 5, 1266 (1986).Google Scholar
2. Holley, W.K., Wells, R.L., Shafieezad, S., McPhail, A.T., and Pitt, C.G., J. Organomet. Chem. 381, 15 (1990), and references cited therein.Google Scholar
3. Wells, R.L., Pitt, C.G., McPhail, A.T., Purdy, A.P., Shafieezad, S., and Hallock, R.B., Chemistry of Materials 1, 4 (1989); Chemical Perspectives of Microelectronic Materials, Materials Research Society Symposium Proceedings 131, 45 (1989), Materials Research Society, Pittsburgh, Pennsylvania.Google Scholar
4. Olshavsky, M.A., Goldstein, A.N., and Alivisatos, A.P., J. Am. Chem. Soc. (in press).Google Scholar
5. Johansen, J.D., Wells, R.L., Hallock, R.B., McPhail, A.T., and Pitt, C.G., Abstr. Papers, 200th Nat. Meeting Am. Chem. Soc., Washington, DC, INOR 507 (August 1990).Google Scholar
6. Becker, V.G., Cutekunst, G., and Wessely, H.J., Z. Anorg. Allg. Chem. 462, 113 (1980).Google Scholar
7. All manipulations were carried out in a nitrogen-filled Dri-Lab using Schlenk apparatus or on a vacuum line. (Me3Si) 3As is an airsensitive liquid with a very disagreeable odor and should be handled with the assumption that it is toxic.Google Scholar
8. Pohlman, J.L. and Brickman, F.E., Z. Naturforsch. 20b, 5 (1965).Google Scholar
9. These characterization data compare favorably to those recorded for an authentic sample of (CrF5) 3GaAs(SiMe3) 3. Elemental analysis (C,H) and a crystal structure were also obtained for the adduct as initially isolated from a different reaction mixture [Wells, R.L., Pitt, C.G., McPhail, A.T., Johansen, J.D., and Hallock, R.B., Abstr. Papers, SE-SW Comb. Reg. Meeting Am. Chem. Soc., New Orleans, LA, INOR 269 (December 1990).]Google Scholar
10. Kayser, O., Heinecke, H., Brauers, A., Lüth, H., and Balk, P., Chemtronics 3, 90 (1988).Google Scholar
11. Berry, A.D., Holm, R.T., Fatemi, M., and Gaskill, D.K., J. Mater. Res. 5 1169 (1990).Google Scholar
12. Joint Committee on Powder Diffraction Standards File Card No. 32–389.Google Scholar
13. Ludeke, R. and Esaki, L., Surface Sci. 47, 132 (1975).Google Scholar
14. Maury, F., Hammadi, A. El, and Constant, G., J. Crystal Growth 68, 88 (1984).Google Scholar