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Use of an Excimer Lamp for Photochemical Resistless Etching of Thermal Silicon Oxide Substrate

Published online by Cambridge University Press:  15 February 2011

N. Kamata  and
M. Murahara
N. Kamata
Affiliation:
Faculty of Electrical Engineering, Tokai University 1117 Kitakaname, Hiratsuka-shi, Kanagawa 259-12, JAPAN
M. Murahara
Affiliation:
Faculty of Electrical Engineering, Tokai University 1117 Kitakaname, Hiratsuka-shi, Kanagawa 259-12, JAPAN
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Abstract

Photochemical resistless etching was carried out by using a Xe2* excimer lamp and a KrF excimer laser. The decomposition method with Xe2* excimer lamp increases the decomposition efficiency by 100 times than that of using ArF excimer laser and etchant gas, CHClF2. Xe2* excimer lamp irradiation allowed decomposition of CHClF2 gas to produce CF2 radical with a small quantity of gas. The CF2 radical was polymerized to form fluorocarbon layer on the SiO2 substrate. Simultaneously, circuit patterned KrF excimer laser was vertically irradiated the fluorocarbon layer on the substrate for resistless etching. The etching depth was about 1,000Â.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 543
Copyright
Copyright © Materials Research Society 1996

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References

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