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The Uniformity Of Surface Passivation After (NH 4)2S Treatment Studied By Near-Field Scanning Optical Microscopy

Published online by Cambridge University Press:  15 February 2011

Jutong Liu  and
T. F. Kuech
Jutong Liu
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
T. F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
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Abstract

We have achieved spatially resolved room temperature photoluminescence (PL) from MOVPE GaAs (001) surfaces by Near-Field Scanning Optical Microscopy (NSOM). The PL intensity variation was related to the change of surface state density. Using this technique, the uniformity of surface passivation after (NH 4)2S treatment has been studied. We have performed the topography, reflection and PL measurements by NSOM as well as the topography measurements by Atomic Force Microscopy (AFM) on the as grown, etched and sulfur passivated GaAs samples. The uniformity of GaAs with a thin Al0.65Ga0.35As cap layer has also been studied and compared with the (NH 4)2S treatment. We found the sub-micron scale variations in PL intensity which were not correlated to the topographic features. Theoretical modeling has been used to obtain semi-quantitative analysis of the experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 523
Copyright
Copyright © Materials Research Society 1996

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