Hostname: page-component-848d4c4894-pjpqr Total loading time: 0 Render date: 2024-06-21T05:58:12.232Z Has data issue: false hasContentIssue false
  • English
  • Français

Uniform and Directed Crystallization of Deposited a­Si on Glass Substrates at Linear Velocities Of 1 to 20 Meters Per Second

Published online by Cambridge University Press:  15 February 2011

D. Bensahel ,
G. Auvert ,
V. T. Nguyen  and
G. A. Rozgonyi
D. Bensahel
Affiliation:
Centre National d'Etudes des Telecommunications, CNS 38240, Meylan ­ FRANCE.
G. Auvert
Affiliation:
Centre National d'Etudes des Telecommunications, CNS 38240, Meylan ­ FRANCE.
V. T. Nguyen
Affiliation:
Centre National d'Etudes des Telecommunications, CNS 38240, Meylan ­ FRANCE.
G. A. Rozgonyi
Affiliation:
Centre National d'Etudes des Telecommunications, CNS 38240, Meylan ­ FRANCE.
Get access

Abstract

It has been found that careful control of the laser power and scan speed will convert deposited a­Si into continuous lines of uniformly crystallized silicon. Two solid phase “explosive” crystallization front velocities of 1000 cm/sec and 1400 cm/sec have been experimentally determined by matching the laser scan velocity with the runaway a–c phase boundary. If solid phase explosive crystallization is suppressed by pre-annealing, then a liquid assisted runaway crystallization velocity of 220 cm/sec is observed, as well as a continuous furnace-like crystallization process at 250 cm/sec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 541
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Auvert, G., Bensahel, D., Perio, A., Morin, F. and Rozgonyi, G. A., preceding paper, These Proceedings.Google Scholar
2. Auvert, G., Bensahel, D., Georges, A., Nguyen, V. T., Henoc, P., Morin, F. and Coissard, P.. Appl. Phys. Lett. 38, 613 (1981).Google Scholar
3. Auvert, G., Bensahel, D., Perio, A., Nguyen, V. T. and Rozgonyi, G. A., Appl. Phys. Lett. 39, 724 (1981).CrossRefGoogle Scholar
4. Chapman, R., Fan, J. C. C., Zeiger, H. J. and Gale, R. P., Appl. Phys. Lett. 37, 292 (1980) and references therein.Google Scholar
5. Fan, J. C. C. and Anderson, C. H. Jr. J. Appl. Phys. 52, 4003 (1981).Google Scholar
6. Morin, F., Morel, M.. Appl. Phys. Lett. 35, 696, (1979).Google Scholar
7. Nissim, Y. I., Lietoila, A., Gold, R. B. and Gibbons, J. F., J. Appl. Phys. 51, 274 (1980).Google Scholar