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Uniaxial Stress Applied To p-Type GaAs/AlGaAs Heterostructures: Influence on Heavy Hole Subbandsau

  • Ole P. Hansen (a1), Janus S. Olsen (a1), W. Kraak (a2), B. Saffian (a2), N. Minina (a3) and A. Savin (a3)...

Abstract

Quantum Hall effect and Shubnikov-de Haas oscillations in a 2D hole gas at a p-GaAs/Al0.5Ga0 5As (001) interface show, that under in-plane (110) uniaxial compression a redistribution of carriers between the two spin-splitted subbands of the ground heavy hole state takes place. At the maximal compression of 2.5 kbar the carrier density of the most populated subband is decreased by 18%, while the total carrier density remains almost unchanged. A decrease of the spin-splitting under the uniaxial compression is proposed.

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