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Understanding Structural Changes in Phase Change Memory Alloys

Published online by Cambridge University Press:  01 February 2011

Paul James Fons ,
Dale Brewe ,
Ed Stern ,
A. V. Kolobov  and
Junji Tominaga
Paul James Fons
Affiliation:
paul-fons@aist.go.jp, National Institute of Advanced Industrial Science & Technology, Center for Applied Near-Field Optics Research, Tsukuba Central 4, Higashi 1-1-1, Tsukuba, Ibaraki, 305-8562, Japan, 81-298-61-5636, 81-298-61-2939
Dale Brewe
Affiliation:
brewe@aps.anl.gov, Advanced Light Source, PNC-XOR, Argonne National Laboratory, Bldg 435E sector 20, 9700 S. Cass Ave., Argonne, Il, 60439, United States
Ed Stern
Affiliation:
stern@phys.washington.edu, University of Washington, Physics Department, Box 351560, University of Washington, Seattle, WA, 98195, United States
A. V. Kolobov
Affiliation:
a.kolobov@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Center for Applied Near-Field Optics Research, Higashi 1-1-1, Tsukuba Central 4, Tsukuba, Ibaraki, 305-8562, Japan
Junji Tominaga
Affiliation:
j-tominaga@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Center for Applied Near-Field Optics Research, Higashi 1-1-1, Tsukuba Central 4, Tsukuba, Ibaraki, 305-8562, Japan
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Abstract

In addition to their wide-spread application in the re-writable optical memory markets, phase-change memory alloys are also poised to take a prominent role in future non-volatile memory applications due to their potential for low-energy usage and indefinite cyclability compared with their silicon-based flash memory counterparts. In contrast with their widespread use, however, the details of the crystalline to amorphous switching process utilized for memory storage remain an active research topic with many details still lacking. Considering the conflicting requirements for high-speed switching, yet long term data storage integrity, a deeper understanding of these materials is essential for insightful application development. We have used x-ray absorption fine structure spectroscopy (XAFS), a technique equally suitable for amorphous and crystalline phases to elaborate details in structural changes in the phase-change process for a variety of phase-change alloys in static measurements. As the kinetics of the switching process are the linchpin for optimizing switching characteristics, we have recently initialted dynamic measurements of light -induced structural changes in Ge-Sb-Te (GST) alloys. These measurements have been carried out synchronously using both femtosecond and nanosecond laser pump pulses in conjunction with 100~ps x-ray pulses generated by an electron storage ring. By synchronously triggering the laser with a variable sub-nanosecond delay, we have been able to use XAFS to probe details of the dynamics of the switching process. Preliminary results learned from this approach applied to GST alloys are presented.

Keywords

phase transformationstructuralmemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 918: Symposium H – Chalcogenide Alloys for Reconfigurable Electronics , 2006 , 0918-H04-01
Copyright
Copyright © Materials Research Society 2006

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References

[1] Ovshinsky, S.R., Phys. Rev. Lett. 21, 1450–1453 (1968).Google Scholar
[2] Petrov, I.I., Imamov, R.M., and Pinsker, Z.G., Sov. Phys. Cryst. 13, 339–344 (1968)Google Scholar
[3] Matsunaga, Toshiyuki and Yamada, Noboru, Jpn. J. Appl. Phys. Pt. 141, 1674–1678 (2002).Google Scholar
[4] Kolobov, A.V., Fons, P., Tominaga, J. Frenkel, A., Ankudinov, A.L., and Uruga, T., Nature Materials 3, 703–708 (2004).Google Scholar
[5] Chattopadhyay, T., Boucherle, JX, and Vonschnering, HG, J. Phys. C. 20, 1431–1440 (1987).Google Scholar
[6] Siegel, J., Schropp, A., Solis, J., Afonso, C. N., and Wuttig, M., Appl. Phys. Lett. 84, 2250–2252 (2004).Google Scholar
[7] Handbook of X-ray Photoemission Spectroscopy, Physical Electronics Inc. (1995).Google Scholar
[8] Graves, J.S. and Allen, R.E., Phys. Rev. B 58, 13627 (1998)Google Scholar
[9] Welnic, W., Pamungkas, A., Detemple, R., Steimer, C., Blugel, S., and Wuttig, M., Nat. Mat. 5, 58 (2006).Google Scholar