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Understanding and Modeling Ramp Rate Effects on Shallow Junction Formation

  • Srinvasan Chakravarthi (a1), Alp H. Gencer (a2), Scott T. Dunham (a3) and Daniel F. Downey (a4)

Summary

In summary, we find it is possible to model the extent of diffusion during spike anneals with varying ramp rates by considering the full thermal cycle. These models allow the optimization of RTP ammealing cycles considering the trade-offs between junction depth and sheet resistance. For example, with 1050°C spike anneals, the active dose (and thus sheet conductivity) varies approximately linearly with junction depth. However, faster ramp rates allow the use of higher spike temperatures, with associated higher activation and reduced sheet resistance for the same junction depth.

Work at Bosten University and the University of Washington was supported by the Semiconductor Research Corporation. We would like to thank Eric Perozziello for details and discussion regarding their experimental results.

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References

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1 Downey, D.F., Felch, S.F., and Falk, S.W.. In Advances in Rapid Thermal Processing, Proc. of Elec. Soc. Meet. (1999).
2 Agarwal, A., Gossmann, H.-J. and Fiory, A.T.. In Si Front-End Proceesing-Phys and Tech. of Dopant-Defect Interactions, 568 MRS Symp. Proc., April(1999).
3 Gencer, A.H. and Dunham, S.T.. In Si Front-End Processing-Physiscs and Technology of Dopoant- Defect Interactions, Materials Research Soc., (1999).
4 Eaglesham, D.J., Stolk, P.A., Gossmann, H.J., and Poate, J.M.. Appl. Phys. Lett. 65(18), 2305 (1994).10.1063/1.112725
5 Chao, H.S.. “Phsics and modeling of ion implantation induced transient enhanced diffusion in silicon” Ph.D. thesis, Stanford University (1997).
6 Perozzoello, E. “Physis and modeling of ion implation induced trasient enhanced diffusion in silion” Ph.D. thesis, Stanford University (1998).
7 Chakravarthi, S. and Dunham, S.T.. In SISPAD Technical Digest, 1998.
8 Dunham, S.T., Chakravarthi, S., and Gencer, Alp H.. In IEDM Digest, 1998.

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Understanding and Modeling Ramp Rate Effects on Shallow Junction Formation

  • Srinvasan Chakravarthi (a1), Alp H. Gencer (a2), Scott T. Dunham (a3) and Daniel F. Downey (a4)

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