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Under-Gate Triode Type Field Emission Displays with Carbon Nanotube Emitters

Published online by Cambridge University Press:  14 March 2011

J. H. Kang ,
Y. S. Choi ,
W. B. Choi ,
N. S. Lee ,
Y. J. Park ,
J. H. Choi ,
H. Y. Kim ,
Y. J. Lee ,
D. S. Chung  and
Y. W. Jin
...Show all authors
J. H. Kang
Affiliation:
The National Creative Research Initiatives Center for Electron Emission Source, Samsung Advanced Institute of Technology, P. O. Box 111, Suwon 440-600, KOREA
Y. S. Choi
Affiliation:
The National Creative Research Initiatives Center for Electron Emission Source, Samsung Advanced Institute of Technology, P. O. Box 111, Suwon 440-600, KOREA
W. B. Choi
Affiliation:
Display Lab., Samsung Advanced Institute of Technology
N. S. Lee
Affiliation:
Display Lab., Samsung Advanced Institute of Technology
Y. J. Park
Affiliation:
Display Lab., Samsung Advanced Institute of Technology
J. H. Choi
Affiliation:
Display Lab., Samsung Advanced Institute of Technology
H. Y. Kim
Affiliation:
The National Creative Research Initiatives Center for Electron Emission Source, Samsung Advanced Institute of Technology, P. O. Box 111, Suwon 440-600, KOREA
Y. J. Lee
Affiliation:
The National Creative Research Initiatives Center for Electron Emission Source, Samsung Advanced Institute of Technology, P. O. Box 111, Suwon 440-600, KOREA
D. S. Chung
Affiliation:
The National Creative Research Initiatives Center for Electron Emission Source, Samsung Advanced Institute of Technology, P. O. Box 111, Suwon 440-600, KOREA
Y. W. Jin
Affiliation:
Display Lab., Samsung Advanced Institute of Technology
J. H. You
Affiliation:
FED team, Samsung SDI
S. H. Jo
Affiliation:
FED team, Samsung SDI
J. E. Jung
Affiliation:
The National Creative Research Initiatives Center for Electron Emission Source, Samsung Advanced Institute of Technology, P. O. Box 111, Suwon 440-600, KOREA
J. M. Kim
Affiliation:
The National Creative Research Initiatives Center for Electron Emission Source, Samsung Advanced Institute of Technology, P. O. Box 111, Suwon 440-600, KOREA
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Abstract

A new structure of triode type field emission displays based on single-walled carbon nanotube emitters is demonstrated. In this structure, gate electrodes are situated under cathode electrodes with an in-between insulating layer, so called under-gate type triode. Electron emission from the carbon nanotube emitters is modulated by changing gate voltages. A threshold voltage is approximately 70 V at the anode bias of 275 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , R5.2.1
Copyright
Copyright © Materials Research Society 2000

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References

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