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Ultrathin Single Crystal CoSi2 Layers on Si(111) and Si(100)

  • R. T. Tung (a1), J. L. Batstone (a1) and S. M. Yalisove (a1)

Abstract

The growth of ultrathin epitaxial CoSi2 layers on Si by molecular beam epitaxy has been studied. This paper briefly outlines recent progress in the growth on Si(111) substrates. New results on the growth of epitaxial CoSi2 on Si(100) are also presented.

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References

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