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Ultrathin Single Crystal CoSi2 Layers on Si(111) and Si(100)

Published online by Cambridge University Press:  26 February 2011

R. T. Tung ,
J. L. Batstone  and
S. M. Yalisove
R. T. Tung
Affiliation:
AT&T Bell Laboratories, Murray Hill, N. J. 07974
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, Murray Hill, N. J. 07974
S. M. Yalisove
Affiliation:
AT&T Bell Laboratories, Murray Hill, N. J. 07974
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Abstract

The growth of ultrathin epitaxial CoSi2 layers on Si by molecular beam epitaxy has been studied. This paper briefly outlines recent progress in the growth on Si(111) substrates. New results on the growth of epitaxial CoSi2 on Si(100) are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 265
Copyright
Copyright © Materials Research Society 1988

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Footnotes

*

Present address: Department of Materials Science and Engineering, University of Liverpool, P. O. Box 147, Liverpool, L69 3BX, U.K.

References

REFERENCES

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