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Ultrashallow SIMS Study of Implanted Dopants in NiSi/Si(100)

Published online by Cambridge University Press:  11 February 2011

Nikolai L. Yakovlev ,
Andrew S.W. Wong ,
Doreen M.Y. Lai  and
Dongzhi Chi
Nikolai L. Yakovlev
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, 117602, Singapore.
Andrew S.W. Wong
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, 117602, Singapore.
Doreen M.Y. Lai
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, 117602, Singapore.
Dongzhi Chi
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, 117602, Singapore.
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Abstract

Ultrashallow doping of silicon wafers with boron was done by implantation of B+ or BF2+. Nickel silicide on them was formed by annealing of thin Ni layer. As it was revealed by secondary ion mass spectrometry, after the growth of NiSi, boron remains in Si just under the silicide layer, but fluorine accumulates in the NiSi layer. This accumulation suppresses agglomeration of the silicide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 745: Symposium N – Novel Materials and Processes for Advanced CMOS , 2002 , N6.8
Copyright
Copyright © Materials Research Society 2003

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References

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