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Ultrafast UV-Laser Induced Oxidation of Silicon

Published online by Cambridge University Press:  22 February 2011

T.E. Orlowski  and
H. Richter
T.E. Orlowski
Affiliation:
Xerox Webster Research Center Rochester, NY 14644
H. Richter
Affiliation:
Xerox Webster Research Center Rochester, NY 14644
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Abstract

A new low temperature method of forming high quality patterned silicon dioxide (SiO2) layers up to a thickness of 1 μm on silicon substrates is presented. UV pulsed laser excitation in an oxygen environment is utilized. IR absorption spectroscopy, CV and IV measurements are employed to characterize the oxide films and the Si-SiO2 interface. No shift but a significant broadening of the Si-O stretching mode compared with thermally grown oxides is found indicating that the laser grown oxide is stoichiometric but with a higher degree of disorder. From CV measurements we deduce a fixed oxide charge near the Si-SiO2 interface of 6×1010/cm2 for oxides that have been thermally annealed in O2 following the laser induced growth making this material a candidate for applications in semiconductor devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 327
Copyright
Copyright © Materials Research Society 1984

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References

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