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Ultra Shallow Junction Formation by B+/BF2+ Implantation at Energy of 0.5 KEV

  • M. Kase (a1), Y Kikuchi (a1), H. Niwa (a1) and T. Kimura (a1)

Abstract

This paper describes ultra shallow junction formation using 0.5 keV B+/BF2+ implantation, which has the advantage of a reduced channeling tail and no transient enhanced diffusion. In the case of l × 1014 cm−2, 0.5 keV BF2 implantation a junction depth of 19 nm is achieved after RTA at 950°C.

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[3] M. A. Foad. England, J.G., Moffatt, S., and Armour, D. G., Proc. I Ith Int. Conf. on Ion Implantation Technology, (1996) pp. 603606
[4] Harrington, W. L., Magee, C. W., Pawlik, M., Downey, D. F., Osbum, C. M., and Felch, S. B., Proc. 4th Int. Workshop on Measurement, Characterization and Modeling of Ultrashallow Doping Profiles in Semiconductor, (1997) pp 7.17.11
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Ultra Shallow Junction Formation by B+/BF2+ Implantation at Energy of 0.5 KEV

  • M. Kase (a1), Y Kikuchi (a1), H. Niwa (a1) and T. Kimura (a1)

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