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Ultra High Voltage Electron Microscopy Study of {113}-Defect Generation in Si Nanowires

  • J. Vanhellemont (a1) (a2), S. Anada (a1), T. Nagase (a1), H. Yasuda (a1), H. Bender (a3), R. Rooyackers (a3) and A. Vandooren (a3)...


Results are presented of a study of {113}-defect formation in Si nanowires with diameters ranging from 50 to 500 nm. The Si nanowires, used for the processing of tunnel-FET's, are etched into a moderately doped epitaxial Si layer on a heavily doped n-type Si substrate. {113}- defects are created in situ by 2 MeV e-irradiation at temperatures between room temperature and 375 °C in an ultra high voltage electron microscope. The observations are discussed in the frame of intrinsic point defect out-diffusion and interaction with dopant atoms.



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