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Ultra High Vacuum Scanning Tunneling Microscopy Observation of Multilayer Step Structure on GaAs and AlAs Vicinal Surface Grown by Metalorganic Vapor Phase Epitaxy

Published online by Cambridge University Press:  03 September 2012

Jun-Ya Ishizaki ,
Yasuhiko Ishizaki  and
Takashi Fukui
Jun-Ya Ishizaki
Affiliation:
Research Center for Interface Quantum Electronics, Hokkaido University, Sapporo 060, Japan, ishizaki@ryouko.rciqe.hokudai.ac.jp / fbkui@ryouko.rciqe.hokudai.ac.jp
Yasuhiko Ishizaki
Affiliation:
Research Center for Interface Quantum Electronics, Hokkaido University, Sapporo 060, Japan, ishizaki@ryouko.rciqe.hokudai.ac.jp / fbkui@ryouko.rciqe.hokudai.ac.jp
Takashi Fukui
Affiliation:
Research Center for Interface Quantum Electronics, Hokkaido University, Sapporo 060, Japan, ishizaki@ryouko.rciqe.hokudai.ac.jp / fbkui@ryouko.rciqe.hokudai.ac.jp
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Abstract

We observe the atomic structures at the multilayer step region on MOVPE-grown GaAs (001) vicinal surface using ultra high vacuum scanning tunneling microscopy (UHV-STM), and clarify that (4×2) or (4×3) like reconstruction units are dominant. Oxide free AlAs surfaces grown on GaAs vicinal surface are also successfully observed by UHV-STM. The reconstruction units at the multilayer step region on AlAs surface have the same units on GaAs vicinal surface. GaAs surface has the lack of dimmer rows on the terrace region just below the multilayer step region, while AlAs surface has dimmer rows even on the terrace just below the multilayer step region. GaAs layer growth leads tothe step bunching phenomenon and AlAs surface leads to the step debunching phenomenon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 95
Copyright
Copyright © Materials Research Society 1997

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References

1 Shwoebel, R.L. and Sphisy, E.J., J.Appl.Phys. 37, 3682, (1966); R.L.Schwoebel, J.Appl.Phys. 40, 614, (1969).Google Scholar
2 Mullins, W.W., Philos. Mag. 48, 1313, (1961).Google Scholar
3 Ishizaki, J., Ohkuri, K. and Fukui, T., Jpn.J.Appl.Phys. 35, 1280, (1996).Google Scholar
4 Ishizaki, J., Ishikawa, Y., Ohkuri, K., Kawase, M. and Fukui, T., to be published in Appl.Surf.Sci.Google Scholar
5 Ishizaki, J., Goto, S., Kishida, M., Fukui, T. and Hasegawa, H., Jpn.J.Appl.Phys. 33, 721, (1994).Google Scholar
6 Kasu, M. and Kobayashi, N., J.Appl.Phys. 78, 3026, (1995).Google Scholar