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A Uhv Tem Study of the in Situ Growth of Ultra-Thin Films of CoSi2 ON Si (100).

Published online by Cambridge University Press:  28 February 2011

D. Loretto ,
J. M. Gibson  and
S. M. Yalisove
D. Loretto
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974.
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974.
S. M. Yalisove
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974.
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Abstract

Ultrathin (>5 nm) films of cobalt have been deposited at room temperature onto silicon (100) and annealed to form CoSi2 in an Ultra High Vacuum (UHV) Transmission Electron Microscope (TEM). We show that there is a critical thickness of cobalt, ∼1 nm, below which CoSi2 is formed directly upon annealing to –400°C and above which CoSi2 is formed via in-situ-CoSi2. The thicker CoSi2 layers which originate from the severely mismatched intermediate phase show many epitaxial orientations while the thinner CoSi2 layers, which form directly, show only three. We relate the suppression of the intermediate phase, and consequent good epitaxy, to the dominance of interface energy in ultra thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 403
Copyright
Copyright © Materials Research Society 1989

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References

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