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Two-Dimensional Damage Distributions Induced by Localized Ion Implantations

  • M. M. Faye (a1), L. Laanab (a1), J. Beauvillain (a1), A. Claverie (a1), C. Vieu (a2) and G. Benassayag (a2)...

Abstract

A general method is presented for calculating the spatial distribution of damage generated by localized implantation in semiconductors. Implantation through masks and focused ion beam implantation in GaAs are simulated and compared to cross-sectional transmission electron microscopy observations. An excellent agreement is obtained when a depth-dependent lateral straggle is considered. Arbitrarily shaped mask edges and different compositions for the mask and the substrate are included in the calculations as well as realistic current profiles of the ion spot in the case of focused ion beam implantations. Simulations and experiments clearly demonstrate the potential application of localized implantations to fabricate lateral quantum nanostructures.

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[1] Deppe, D.G. and Holonyak, N. Jr, J. Appl. Phys. 64 (12), 593 (1988)
[2] Cibert, J., Petroff, P.M., Dolan, G.J., Pearton, S.J., Gossard, A.C. and English, J.H., Appl. Phys. Lett. 49 (19), 1275 (1986)
[3] Hirayama, Y., Tarucha, S., Suzuki, Y. and Okamoto, H., Phys. Rev. B37 (5), 2774 (1988)
[4] Claverie, A., Vieu, C., Faure, J. and Beauvillain, J., Appl. Surf. Sci. 43, 106 (1989)
[5] Biersack, J.P. and Haggmark, L.G., Nucl. Instr. Meth. B182/183, 199 (1981)
[6] Winterbon, K.B., Ion implantation ranges and energy deposition distributions, volume 2, IFI/plenum (1975)
[7] Brice, D.K., Ion implantation ranges and energy deposition distributions, volume 1, IFI/plenum (1975)
[8] Faye, M.M., Beauvillain, J., Salles, Ph., Laanab, L., Yahia-messaoud, A., Martinez, A. and Claverie, A., to be published in J. Appl. Phys, December 1992
[9] Vieu, C., Claverie, A., Faure, J. and Beauvillain, J., Nucl. Instr. Meth. B36, 137 (1989)
[10] Ashworth, D.G., Oven, R. and Mundin, B., J. Phys. D: Appl. Phys. 23, 870 (1990)
[11] Stein, H.J., Vook, F.L., Brice, D.K., Borders, J.A. and Picraux, S.T., in proceedings of the 1st International Conference on Ion Implantation (Gordon and Breach, London, 1971), p. 17
[12] Beauvillain, J., Claverie, A., Akmoum, K., J. Phys. III (France) 2, 407 (1992)
[13] Benassayag, G., Vieu, C., Gierak, J., Planel, R. and Schneider, M., J; Vac. Sci. Technol. B9 (5), 2679 (1991)
[14] Akmoum, K., PhD. Thesis University of Toulouse 1991

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